Lam Research Corporation

Ren Zhou

Xuyen Pham

Tuan Anh Nguyen

Simon McClatchie

Vien Quach

Eric H Lenz

David Wei

Enrico Magni

Daxing Ren

Peter Norton

Tony Luong

Sridharan Srivatsan

Patrick P H Wu

Katgenhalli Y Ramanujam

Linda Jiang

Joseph P Simon

Sabir A Majumder

Wen-Chiang Tu

Anjun Jerry Jin

Raisa Khavinson

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.

Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch

A method of mixing two or more chemicals such as for a CMP system. The method includes delivering a first chemical to a first inlet port of a point of use mixer at a first flow rate, delivering a second chemical to a second inlet port of the point of use mixer at a second flow rate, controlling the flow of the first and second chemicals into the mixer upon demand for a mixture of the first and second chemicals and balancing the flow of the first and second chemicals into the mixer. The mixture can also be output such as to a CMP process. A system for mixing two or more chemicals is also described.

System and method for point of use delivery, control and mixing chemical and slurry for CMP/cleaning system

An apparatus and method for evenly distributing a polishing fluid onto a polishing pad during a chemical mechanical planarization process, wherein the polishing fluid is dispersed by way of a spray being emitted from a spray nozzle. The pattern of polishing fluid applied to the polishing pad can be modified by adjustment of geometric parameters of the spray nozzle. The apparatus is configured with actuating mechanisms for translating and rotating the spray nozzle relative to the polishing pad in order to adjust a pattern of distribution of the polishing fluid. The method of dispersing polishing fluid onto the polishing pad produces an even distribution of polishing fluid across a width of the polishing pad.

Apparatus and method for distributing a polishing fluid

Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.

Methods of and apparatus for controlling polishing surface characteristics for chemical mechanical polishing

A linear chemical mechanical planarization (CMP) system includes a belt pad, a slurry bar having a plurality of nozzles, and a heating module for heating slurry. The heating module has a plurality of heating elements, each of which is coupled in flow communication with one of the plurality of nozzles of the slurry bar. The system also may include a control system for controlling the heating elements of the heating module and first and second temperature sensors coupled to the control system. The first temperature sensors measure the temperature of slurry heated by each of the heating elements, and the second temperature sensors measure the temperature of the surface of the belt pad. A method for dispensing slurry in a linear CMP system, and methods for controlling the temperature of the surface of the belt pad and the temperature of slurry in a linear CMP system also are described.

Methods and systems for controlling belt surface temperature and slurry temperature in linear chemical mechanical planarization

A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Method and apparatus for heating polishing pad

A system and method of delivering a liquid to a CMP polishing pad includes supplying the liquid to a nozzle, the nozzle being oriented toward a polishing surface of the CMP polishing pad. The liquid flows at a rate of less than or equal to about 100 cc per minute. A pressurized carrier gas is also supplied to the nozzle. The liquid is substantially evenly sprayed from the nozzle onto the CMP polishing pad.

System, method and apparatus for applying liquid to a CMP polishing pad

An invention is provided for a carrier head for use in a CMP process. The carrier head includes a metal plate that is capable of transferring a downforce to a wafer during a CMP operation. A plurality of vacuum holes is disposed within the metal plate, wherein each vacuum hole is positioned such that the vacuum hole is within five millimeters of an edge of the wafer during the CMP operation. In this manner, each vacuum hole can be positioned such that the vacuum hole is within an edge exclusion zone of the wafer during the CMP operation. In some embodiments, each vacuum hole is positioned such that the vacuum hole is within three millimeters of the edge of the wafer during the CMP operation, such as 2.7 millimeters from the edge of the wafer.

Carrier head having location optimized vacuum holes

A chemical mechanical planarization (CMP) system includes a point of use chemical mixing system. The point of use chemical mixing system includes a first and a second pump, a first and a second flow sensor, a mixer and a controller. The first pump has an input coupled to a first chemical supply and the first flow sensor coupled to the output of the first pump. The second pump has an input coupled to a second chemical supply and the second flow sensor coupled to the output of the second pump. The mixer has inputs coupled to the output of the first and second flow sensors. The controller is configured to receive signals from the first and second flow sensors and to produce control signals for the first and second pumps and the mixer. The controller is further configured to cause a mixture of the first and second chemicals upon a demand from the CMP process.

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Fremont, CA, United States of America

Ren Zhou