Taiwan Semiconductor Manufacturing Comp. Ltd.

Ren-Wei Xiao

Chia-Wei Liu

Chung-Chuan Tseng

Fang-Ting Kuo

Chien-Ying Wu

Chun Hua Chang

Cindy Kuo

Sheng Yu Lin

A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.

Method of forming semiconductor structures including metal insulator metal capacitor

Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Methods of forming metal pad structures over TSVS to reduce shorting of upper metal layers

A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor further includes a capacitor bottom layer over the oxide-based dielectric layer, an insulator layer over the capacitor bottom layer, and a capacitor top layer over the insulator layer.

Semiconductor structures including metal insulator metal capacitor

Metal pad structure over TSV to reduce shorting of upper metal layer

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Shetou, Taiwan

Ren-Wei Xiao