Globalfoundries Inc.

Remi Riviere

Arthur Hotzel

Joachim Patzer

Dominic Thurmer

Wolfram Grundke

Ardechir Pakfar

Bastian Haussdoerfer

Philipp Jaschinsky

Robert Melzer

Chih-Chun Wang

Martin Weisheit

A method and apparatus for detecting changes in the vibrational mode spectra and/or elasticity of a pellicle without reliance upon visual inspection are provided. Embodiments include providing a pellicle, a lower surface of the pellicle attached to a photomask; directing light from a light source onto an upper surface of the pellicle at an angle to the upper surface; causing a deflection of the pellicle concurrently with the light being directed onto the pellicle; detecting light reflected off of the deflected pellicle; and characterizing a vibrational mode of the pellicle based on the detection.

In-situ contactless monitoring of photomask pellicle degradation

Methods, apparatus, and system for minimizing defectivity in top-coat-free immersion photolithography are provided. Embodiments include forming a photomask by defining a first pattern including a main functional pattern in the photomask; and defining a second pattern including a sub-resolution fill pattern in the photomask in areas between or and/or within structures of the first pattern, the fill pattern having a pitch or range of pitches smaller than a minimum resolved pitch of the lithographic exposure and/or at least a part of the sub-resolution structures of the sub-resolution fill pattern not substantially modifying an imaging of any structure of the main functional pattern in the lithographic exposure.

Methods, apparatus, and systems for minimizing defectivity in top-coat-free lithography and improving reticle CD uniformity

A method for the manufacture of a semiconductor device is provided, including the steps of providing a semiconductor substrate including a first area separated from a second area by a first isolation region, wherein the second area includes an intermediate transistor comprising a gate electrode, forming an oxide layer over the first and second areas, forming an optical planarization layer (OPL) over the oxide layer, forming a mask layer over the OPL in the first area without covering the OPL in the second area, and etching the OPL with the mask layer being present to expose the oxide layer over the gate electrode of the transistor.

Method of forming a semiconductor device employing an optical planarization layer

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Dresden, Germany

Remi Riviere