Asml Netherlands B.v.

U.S. Philips Corporation

Asnl Netherlands B.v.

Reiner Maria Jungblut

Everhardus Cornelis Mos

Wim Tjibbo Tel

Peter Ten Berge

Franciscus Bernardus Maria Van Bilsen

Hoite Pieter Theodoor Tolsma

Christianus Gerardus Maria De Mol

Leonardus Henricus Marie Verstappen

Paul Jacques Van Wijnen

Gerald Dicker

Wouter Lodewijk Elings

Richard Johannes Franciscus Van Haren

Paul Christiaan Hinnen

Emil Peter Schmitt-Weaver

Xing Lan Liu

Bart Peter Bert Segers

Yichen Zhang

Chung-Hsun Li

Hyunwoo Yu

Petrus Gerardus Van Rhee

Maria Kilitziraki

Marcus Adrianus Van De Kerkhof

Leon Paul Van Dijk

Rene Marinus Gerardus Johan Queens

Erik Johan Koop

Koenraad Remi André Maria Schreel

Cedric Marc Affentauschegg

Erik Roelof Loopstra

Maurits Van Der Schaar

Timotheus Franciscus Sengers

Frank Staals

Stefan Hunsche

Paul Van Der Sluis

Freddy Roozeboom

Heine Melle Mulder

Peter Alexander Duine

Laurentius Catrinus Jorritsma

Willem Seine Christian Roelofs

Judocus Marie Dominicus Stoeldraijer

Masashi Ishibashi

Friedrich J Den Broeder

Ronald Henricus Johannes Otten

Robertus Wilhelmus Van Der Heijden

Hakki Ergun Cekli

Freerk Adriaan Stoffels

Cornelis Draijer

Milenko Jovanovic

Li Chung-Hsun

Ralph M Hanzen

A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

Computational metrology

A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

Focus and overlay improvement by modifying a patterning device

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Methods and apparatus for measuring a property of a substrate

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produceddefined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is usedto control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stackedto at least partially recompose the measurement results according to the sample plan.

A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.

Methods for controlling lithographic apparatus, lithographic apparatus and device manufacturing method

A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.

Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.

Lithographic apparatus and method

A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

Method for determining a process window for a lithographic process, associated apparatuses and a computer program

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced () defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used () to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked () to at least partially recompose the measurement results according to the sample plan.

A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

Lithographic apparatus and device manufacturing method

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Eindhoven, Netherlands

Reiner Maria Jungblut