Tokyo Electron Limited

Reika Ko

Naoki Matsumoto

Nobuyuki Okayama

Kazuto Takai

A plasma etching apparatusincludes a mounting table that holds a semiconductor substrate W thereon; a first heaterthat heats a central region of the semiconductor substrate W held on the mounting table; a second heaterthat heats an edge region around the central region of the semiconductor substrate W held on the mounting table; a reactant gas supply unitthat supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table; and a control unitthat performs a plasma etching process on the semiconductor substrate W while controlling the first heaterand the second heaterto heat the central region and the edge region of the processing target substrate W held on the mounting tableto different temperatures.

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Chiba, Japan

Reika Ko