Infineon Technologies Ag

Mattson Thermal Products Gmbh

Regina Hayn

Jens-Uwe Sachse

Wilhelm Kegel

Georg Roters

Erwin Schoer

Steffen Frigge

Olaf Storbeck

Yao Zhi Hu

Sing Pin Tay

Michael Stadtmüller

A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

Device and method for thermally treating semiconductor wafers

During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates

Growing community of inventors

Bernsdorf, Germany

Regina Hayn