Rca Inc.

Raymond J Menna

Richard N Brown

Mahesh Kumar

Ho-Chung Huang

Srinivas T Rao

James C Whartenby

A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.

Method for fabricating via connectors through semiconductor wafers

A 0.degree. and 180.degree. hybrid power divider/combiner includes a first quadrature hybrid and two other quadrature hybrids arranged in tandem with one output port of the first hybrid connected to an input port of the tandem arrangement and the other output port thereof connected to a delay of electrical length equal to that of the tandem arrangement. When an input signal is applied to one input port of the first hybrid with the other port terminated, two signals of reduced amplitude which are either in phase or of opposed phase (dependent on which input port receives the input signal) are produced at the output of the tandem arrangement and delay.

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Plainsboro, NJ, United States of America

Raymond J Menna