Advanced Technology Materials, Inc.

Ray Dubois

Glenn M Tom

Jose I Arno

Mark R Holst

Rebecca Faller

Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions

A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.

Abatement of effluents from chemical vapor deposition processes using organometallic source reagents

A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organomettalic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.

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Ray Dubois