Merck Patent Gmbh

University of California

Ravindra Kanjolia

Jacob Woodruff

Daniel Moser

Andrew C Kummel

Mansour Moinpour

Charles Dezelah

Guo Liu

Joby Eldo

Charith Nanayakkara

Mark C Potyen

SeongUk Yun

Cheng-Hsuan Kuo

Shawn Sungeun Hong

Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Compounds and methods for selectively forming metal-containing films

A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices

Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO), wherein L is selected from the group consisting of a linear or branched C-C-alkenyl and a linear or branched C-C-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C-C-alkenyl, C-C-alkyl, alkoxy and NRR; wherein Rand Rare independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N, or a reducing gas such as Hor a combination thereof.

Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

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NORTH ANDOVER, MA, United States of America

Ravindra Kanjolia