Sigma-aldrich Co. LLC

Merck Patent Gmbh

Applied Materials, Inc.

Safc Hitech, Inc.

Ravi Kanjolia

Rajesh Odedra

Neil Boag

Charles Dezelah

Shaun Garratt

Joby Eldo

David P Thompson

Jeffrey W Anthis

Daniel Moser

Ming Fang

Mark Saly

Jeff Anthis

David W Weyburne

Graham Williams

Guo Liu

Mark Wilkinson

Hugh Cunning

Chris Platts

Nam Nguyen

Bin Xi

Shaun Garrett

David Thompson

Jeffrey Anthis

Raj Odedra

Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Metal complexes containing cyclopentadienyl ligands

Metal complexes containing substituted allyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Metal complexes containing allyl ligands

Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

Film deposition using precursors containing amidoimine ligands

Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided. 

Metal complexes containing amidoimine ligands

Manganese complexes, methods of making the same, and use thereof in thin film deposition, such as CVD and ALD are provided herein.

Manganese complexes and use thereof for preparing thin films

A solid precursor delivery assembly generally includes a container having upper and lower portions and chambers defined within the container, including an inlet chamber, an outlet chamber, and first and second precursor chambers. The first and second precursor chambers are configured for holding precursor material within the container. Sintered frits are fixedly coupled and sealed to an interior portion of the container, and define at least part of the chambers within the container. At least one of the sintered frits is configured for retaining precursor material thereon within the first precursor chamber, and at least one of the sintered frits is configured for retaining precursor material thereon within the second precursor chamber. An inlet is coupled to the container for delivering carrier gas into the container, and an outlet is coupled to the container for use in removing vaporized precursor material and carrier gas from the container.

Solid precursor delivery assemblies and related methods

Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R, R, R, R, Rand Rare independently and at each occurrence alkyl; R, Rand Rare independently alkyl; Rand Rare independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5. 

Molybdenum allyl complexes and use thereof in thin film deposition

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein Rand Rare independently C-C-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously. 

High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films

Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted &#x3b7;-allyl)(carbonyl)metal complexes.

Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C-alkyl; X is C-C-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Methods of forming thin metal-containing films by chemical phase deposition

An organometallic precursor is provided. The precursor corresponds in structure to Formula I:Cp(R)M(CO)(X)&#x2003;&#x2003;(Formula I)wherein: M is Ru, Fe or Os; R is C-C-alkyl; X is C-C-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Organometallic precursors for use in chemical phase deposition processes

A bubbler () for delivering liquid or solid metalorganic compounds to a reactor site. The bubbler has an inner and outer chamber and has a member () positioned between its inlet () and outlet () that is provided with a plurality of apertures therein. The member () is preferably in the form of a perforated disc having a predefined density of apertures therein to provide optimum pick up and flow of carrier gas through the bubbler.

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North Andover, MA, United States of America

Ravi Kanjolia