Kla Tencor Corporation

Hoechst Celanese Corporation

General Signal Corporation

Shipley Company LLC

Raul V Tan

John F Schipper

Robert G Ozarski

David W Myers

Michael P Watts

Thiloma I Perera

Shifang Li

Lena Nicolaides

Timothy Goodwin

Christopher P Ausschnitt

Edward A McFadden

Disclosed are methods and apparatus for measuring a characteristics of a through-silicon via (TSV) structure. A beam profile reflectivity (BPR) tool is used to move to a first xy position having a TSV structure. The BPR tool is then used to obtain an optimum focus of at the first xy position by adjusting the z position to a first optimum z position for obtaining measurements at the first xy position. Via the BPR tool, reflectivity measurements for a plurality of angles of incidence are obtained at the first xy position. One or more film thicknesses for the TSV structure are determined based on the reflectivity measurements. A z position can also be recorded and used to determine a height of such TSV structure, as well as one or more adjacent xy positions.

Apparatus and methods for measuring properties in a TSV structure using beam profile reflectometry

A lithographic process analysis and control system which provides a modeled verison of a lithographic process in the dimensions of feature width, focus and exposure. This system uses the model to quickly determine the range of focus and exposure limits for obtaining the desired feature width. The system has flexible graphic display capability for displaying graphic representations of the data as measured and modeled.

Lithographic process analysis and control system

Several methods for evaluating certain changes induced in a film of semiconductor resist material after the coat process and before or at completion of the softbake process, by monitoring thickness of and absorption by a film of resist material.

Characterization of semiconductor resist material during processing

Two methods of determination of the chemical changes induced in a film of material such as photoresist that has been exposed to electromagnetic radiation. Two methods use measurement of polarized light reflected by the film mounted on a substrate to determine a real refractive index or a complex refractive index of the film. Two other methods use measurement of polarized light by the film mounted on a (partly) transparent substrate to determine a real refractive index or a complex refractive index of the film.

Absorption measurements of materials

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Raul V Tan