Micron Technology Incorporated

American Semiconductor Corporation

Randall S Parker

Jaspreet Singh Gandhi

Jin Li

Christopher J Gambee

Douglas R Hackler, Sr

Yangyang Sun

Mark Bossler

Charles E Larson

The described method enables removal of any flexible material from a temporary carrier for transfer to another surface. In particular, a semiconductor wafer is commonly held by a temporary adhesive to a carrier substrate for support during a variety of processing steps, including thinning of the semiconductor device layer. Subsequent to processing, the described method attaches the ultra-thin device layer to a roll of tape for removal from the temporary adhesive, followed by transfer to a demount roller, which then releases it onto a desired permanent surface. Utilizing the flexible nature of the ultra-thin device layer, the sequence of rollers is able to peel it from the temporary adhesive without any need for laser release processing or chemical adhesive removal while maintaining the thinned wafer in a planar form during processing. This transfer supports operations that include a change of orientation, such as from face up to face down.

Method of demounting thin semiconductor devices

A method for selectively removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SFwithout forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.

Semiconductor structures comprising at least one through-substrate via filled with conductive materials

A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SFwithout forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.

Methods of selectively removing a substrate material

Methods and systems for removing protective films from microfeature workpieces are disclosed herein. One particular embodiment of such a method comprises separating at least a portion of a protective tape from a workpiece to which the protective tape is attached with a separator configured to drive against an interface between the protective tape and the workpiece. The method further includes engaging the portion of the protective tape detached from the workpiece with a removal system.

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Boise, ID, United States of America

Randall S Parker