Applied Materials, Inc.

Rana Howlader

David P Thompson

Juan Carlos Rocha-Alvarez

Mark Joseph Saly

Deenesh Padhi

Bhaskar Jyoti Bhuyan

Xinhai Han

Dmitry A Dzilno

Zheng John Ye

Lakmal Charidu Kalutarage

Edward P Hammond

Sanjay G Kamath

Daemian Raj Benjamin Raj

Shailendra Srivastava

Kristopher R Enslow

Abhigyan Keshri

Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

Power supply signal conditioning for an electrostatic chuck

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

Methods for selective deposition of dielectric on silicon oxide

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Rana Howlader