Shanghai Huali Integrated Circuit Corporation

Fudan University

Shanghai Huali Microelectronics Corporation

Ran Huang

Jian Ding

Jing Zhou

Xin Zhi Ma

Ying Xu

Xiaoping Zheng

Sainan Zhang

Jianning Deng

Xiaolin Cui

Shidong Fu

Bohan Jiang

Longyan Wu

Xinyi Ning

Qiuchen Xu

Yeqing Cui

Lisheng Tang

The invention provides a multi-dimensional broad-spectrum clinical in-situ testing equipment designed to evaluate the material properties of plantar soft tissue. The equipment comprises the following features: 1. A testing table with a designated area corresponding to the sole of the foot; 2. A vertical reciprocating stress-strain testing unit mounted on the testing table, for applying vertical tensile and compressive stresses to the plantar and measuring the stress-strain responses; 3. A shear stress-strain testing unit, mounted on the testing table, for applying shear stresses to the plantar and measuring the stress-strain responses; 4. A torque stress-strain detection unit, positioned on the testing stage, for applying torque to the plantar and measuring the stress-strain responses; 5. A lifting mechanism that facilitates the vertical movement of the three testing units. In conclusion, the device is capable of multi-dimensional detection of the mechanical properties of plantar and features a compact structure and easy portability.

Multi-dimensional broad-spectrum clinical in-situ testing equipment for evaluating mechanical properties of plantar soft tissue

A method for etching back a hard mask layer on top of dummy polysilicon gates in a gate last process comprises: step 1: forming a plurality of dummy gate structures; step 2: depositing a spin-on carbon (SOC) layer to fill the space regions between the sidewalls of the dummy gate structures to a level above the top surface of each of the plurality of dummy gate structures; step 3: performing a first etching-back to the spin-on carbon layer to remove the SOC layer outside the space regions and keep the SOC layer in the space regions below the top surfaces of each of dummy polysilicon gate; step 4: performing a second etching-back by using the remaining spin-on carbon layer as a mask to remove the hard mask layer and the sidewalls of the dummy polysilicon gates on both sides of the hard mask layer at the same time; step 5: removing the SOC layer. This technique saves one photomask and improves the process window.

Method for etching back hard mask layer on tops of dummy polysilicon gates in gate last process

The application discloses an automatic product dispatching device in case of a site abnormality in a queue time section loop, which includes a risk level definition module and a risk control logic module for product dispatching in case of the site abnormality; the risk level definition module divides risks into a plurality of levels, defines a corresponding site risk level at each site, divides a queue time section loop from a current site to an abnormal site of products into a current queue time section, a middle queue time section and an abnormal queue time section, and respectively defines section risk level; the risk control logic module forms a current product dispatching result according to a logic relationship among the section risk levels. The application further discloses an automatic product dispatching method in case of a site abnormality in a queue time section loop.

Automatic product dispatching device and method in case of site abnormality in queue time section loop

A method for MOM capacitance value control is disclosed. The method comprises: S: setting a target thicknesses for each metal layers; S: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S; S: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.

Method and system for MOM capacitance value control

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Shanghai, China

Ran Huang