Analog Devices International Unlimited Company

Ramji Lakshmanan

Bernard Patrick Stenson

Baoxing Chen

Padraig Fitzgerald

Oliver J Kierse

Paul Martin Lambkin

Laurence Brendan O'Sullivan

Michael John Flynn

Michael James Twohig

Jinglin Xu

William Allan Lane

Michael C W Coln

Donal McAuliffe

Shane Patrick Geary

Helen Berney

Roman Trogan

Christina B McLoughlin

Christophe Antoine

Shane Geary

Himanshu Jain

Christina Mcloughlin

A microfabricated thermal platform can be formed over a substrate, such as a silicon wafer, that may form part of the platform. The substrate is coated in a thermally-insulating material, which may be an organic polymer such, as polyimide or SUS. The surface of the thermally-insulating material may include an arrangement of one or more thermal sites, with each site having a reaction plate (or thermal plate) over which chemical reactions may occur. A heating element may be positioned beneath each reaction plate. A fluidic medium, such as a liquid or a gas, may be disposed over the thermal sites. One application is in chemical and biological reactions. In such reactions, the fluidic medium may be an aqueous solution which comprises reagents for those reactions. The fluidic medium may be an ionically conducting fluid, organic solution or a gas. Precise temperature control enables the correct reactions.

Thermal platform and a method of fabricating a thermal platform

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

Integrated circuit packages to minimize stress on a semiconductor die

Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high bandwidth, high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within such range. The isolators may include isolator components galvanically isolated from and capacitively coupled to each other. The sizes and shapes of the isolator components may be configured to control the values of equivalent inductances and capacitances of the isolators to facilitate resonance in operation. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Capacitively coupled resonators for high frequency galvanic isolators

Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 20 GHz, not less than 30 GHz, not less than 65 GHz, or between 20 GHz and 100 GHz, including any value or range of values within such range. The isolators may include inductive loops with slits and capacitors integrally formed at the slits. The sizes and shapes of the inductive loops and capacitors may be configured to control the values of equivalent inductances and capacitances of the isolators. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

High frequency galvanic isolators

Growing community of inventors

Limerick, Ireland

Ramji Lakshmanan