Lam Research Corporation

Novellus Systems Incorporated

Other

Lam Researh Corporation

Lam Research Foundation

Ramesh Chandrasekharan

Adrien Lavoie

Karl Frederick Leeser

Shankar Swaminathan

Frank Loren Pasquale

Chloe Baldasseroni

Edward J Augustyniak

Douglas L Keil

Ishtak Karim

Yukinori Sakiyama

Jennifer Leigh Petraglia

Michael Philip Roberts

Jon Henri

Hu Kang

Chunguang Xia

Antonio Xavier

Seshasayee Varadarajan

Easwar Srinivasan

Pulkit Agarwal

Patrick G Breiling

Ravi Kumar

Saangrut Sangplung

Thomas G Jewell

James Samuel Sims

Paul Konkola

Andrew John McKerrow

Aaron Durbin

Andrew Duvall

Yaswanth Rangineni

Damien Martin Slevin

Edmund Minshall

Jeremy Tucker

Ryan Blaquiere

Eashwar Ranganathan

Tuan Anh Nguyen

Bart Jan Van Schravendijk

Ming Chu Li

Dennis Michael Hausmann

Mandyam Sriram

Purushottam Kumar

David Charles Smith

Jun Qian

Thomas W Mountsier

Adrien LaVoie

Jennifer O'Loughlin

Aaron R Fellis

Kathryn Merced Kelchner

Dirk Rudolph

Aaron Bingham

Sung Je Kim

Tom Dorsh

Joseph Nesmith

Meenakshi Mamunuru

Ashish Saurabh

Sairam Sundaram

Steven Goza

Bryan Schlief

Michal Danek

Patrick A Van Cleemput

Alan M Schoepp

Mohamed Sabri

Timothy Scott Thomas

Colin F Smith

Michael G R Smith

Vincent Burkhart

William T Lee

Richard Phillips

Andrew H Breninger

Bart K Van Schravendijk

Ted Minshall

Brian Joseph Williams

Andrew Borth

Jeongseok Ha

Basha Sajjad

Jeremiah Baldwin

Chan Myae Myae Soe

Aleksey V Altecor

Erica Sakura Strandberg Pohl

Nuoya Yang

Tony Shaleen Kaushal

Heather Landis

Ingi Bae

Davis Weymann

A temperature-controlled substrate support for a substrate processing system includes a substrate support and a controller. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one, and a temperature sensor located in one of the N zones. The controller is configured to calculate N resistances of the N resistive heaters during operation and adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to a temperature measured by the temperature sensor located in the one of the N zones and the N resistances of the N resistive heaters.

Dual zone heaters for metallic pedestals

A substrate processing system includes a processing chamber, a substrate support including a plurality of heater zones arranged in the processing chamber, a gas delivery system configured to deliver process gases to the processing chamber, and a controller configured to communicate with the gas delivery system and the plurality of heater zones, initiate a first treatment step of a process during a transient temperature period after a substrate is arranged on the substrate support and prior to the substrate reaching a steady-state temperature of the substrate support, and adjust heating to each of the plurality of heater zones during the first treatment step based on average heat functions determined for corresponding ones of the plurality of heater zones during a period corresponding to the first treatment step.

Rapid tuning of critical dimension non-uniformity by modulating temperature transients of multi-zone substrate supports

A processing tool, comprising a processing chamber for processing a work piece, the processing chamber including at least one component part that is coated with multi-layer protective coating including (a) an aluminum layer formed on the at least one component part and (b) a ceramic coating formed on the aluminum layer. In various embodiments, the multi-layer protective coating can be applied to at least one component part prior to assembly of the processing chamber or at least partially in situ the processing chamber.

Multilayer coatings of component parts for a work piece processing chamber

The present disclosure relates, in part, to an apparatus for controlling the concentration of a component within a gas mixture. In particular embodiments, the component is a vaporized liquid component, such as a vaporized stabilizer or a vaporized precursor. Also described are systems thereof and methods for such control.

Concentration control using a bubbler

A system to process a semiconductor substrate includes a substrate support assembly configured to support the semiconductor substrate. The substrate support assembly includes M resistive heaters respectively arranged in M zones in a layer of the substrate support assembly, where M is an integer greater than 1. The layer is adjacent to the semiconductor substrate. The substrate support assembly includes N temperature sensors arranged at N locations in the layer, where N is an integer greater than 1 and less than or equal to M. The system further includes a controller configured to control one or more of the M resistive heaters based on a temperature sensed by one of the N temperature sensors and average temperatures of one or more of the M zones.

Temperature control of a multi-zone pedestal

A method for evacuating a volume below a substrate in a substrate processing system includes arranging the substrate on a lift mechanism of a substrate support to define the volume below the substrate between the substrate and an upper surface of the substrate support. An evacuation step is initiated to evacuate the volume below the substrate. The evacuation step includes pumping down the volume below the substrate at least one of through and around the lift mechanism. The lift mechanism is lowered during the evacuation step to position the substrate on the upper surface of the substrate support and the evacuation step is terminated.

Use of vacuum during transfer of substrates

Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

Electrostatic chuck with seal surface

A system to deposit a film on a substrate using atomic layer deposition includes a pedestal arranged in a processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate. A first annular recess in the pedestal extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate. The first annular recess has an inner diameter that is greater than a diameter of the substrate. An annular ring is made of a dielectric material and is arranged around the substrate in the first annular recess. A second annular recess in the pedestal is located under the annular ring. The second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the substrate.

Pedestals for modulating film properties in atomic layer deposition (ALD) substrate processing chambers

A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values. The solving module, subsequent to the calibration of the temperature control elements, controls operation of the temperature control elements during at least one of a trim or deposition step based on the operating parameters.

Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes

A heater control system for a gas delivery system of a substrate processing system includes an oven, N resistive uninsulated heaters arranged inside of the oven, where N is an integer greater than one, and a controller. The oven encloses one or more components of the substrate processing system and to maintain a predetermined temperature in the oven. Each of the N resistive heaters selectively heats at least a portion of one of the components in the oven. The controller is configured to maintain the predetermined temperature in localized regions in the oven by determining a resistance in each of the N resistive heaters and adjusting power to each of the N resistive heaters based on N-1 resistance ratios of N-1 of the N resistive heaters relative to one of the N resistive heaters.

Progressive heating of components of substrate processing systems using TCR element-based heaters

A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

Systems and methods for reducing effluent build-up in a pumping exhaust system

Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

Fill on demand ampoule refill

A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Substrate processing systems including gas delivery system with reduced dead legs

A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N−1 resistance ratios.

Dynamic temperature control of substrate support in substrate processing system

A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

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Portland, OR, United States of America

Ramesh Chandrasekharan