Rca Inc.

Ramazan Soydan

Lubomir L Jastrzebski

John F Corboy, Jr

Robert H Pagliaro, Jr

A method for depositing monocrystalline silicon at a uniform rate onto a plurality of unequally sized monocrystalline nucleation sites comprises initially providing a substrate having an apertured oxide mask on a major surface thereof. The oxide mask includes a plurality of apertures each of which exposes a nucleation site on the substrate surface. The substrate is then exposed to a mixture of dichlorosilane and hydrogen chloride at 850.degree. C. and a pressure less than approximately 50 torr, for a predetermined time. This yields a monocrystalline silicon island extending from each nucleation site. Each of the islands has a substantially flat profile across the major surface thereof and all islands are equal in thickness.

Method of depositing uniformly thick selective epitaxial silicon

A method for substantially uniformly thinning a silicon layer comprises providing a silicon layer having a surface, oxidizing substantially all of the surface so as to transform a uniformly thick layer of silicon into oxide, and removing all the oxide so as to expose the silicon layer.

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Berkley Township, Ocean County, NJ, United States of America

Ramazan Soydan