Asml Netherlands B.v.

Asml Holding N.v.

Ralph Brinkhof

Patricius Aloysius Jacobus Tinnemans

Franciscus Godefridus Casper Bijnen

Edo Maria Hulsebos

Loek Johannes Petrus Verhees

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Manouk Rijpstra

Simon Gijsbert Josephus Mathijssen

Hakki Ergün Cekli

Weitian Kou

Willem Seine Christian Roelofs

Hadi Yagubizade

Martin Jules Marie-Emile De Nivelle

Marcus Emile Joannes Boonman

Wendy Johanna Martina Van De Ven

Matthijs Cox

Ahmet Koray Erdamar

Pieter Jacob Heres

Jorn Kjeld Lucas

Ingrid Margaretha Ardina Van Donkelaar

Tran Thanh Thuy Vu

Arie Jeffrey Den Boef

Kaustuve Bhattacharyya

Boris Menchtchikov

Jozef Petrus Henricus Benschop

Lukasz Jerzy Macht

Arthur Winfried Eduardus Minnaert

Alex Van Zon

Leendert Jan Karssemeijer

Sudharshanan Raghunathan

Maaike Van't Westeinde

Cornelis Henricus Van De Vin

Hielke Schoonewelle

Jan Stoeten

Erwin Antonius Martinus Van Alphen

Joost Jeroen Ottens

Everhardus Cornelis Mos

Frank Staals

Koen Jacobus Johannes Maria Zaal

Tjarko Adriaan Rudolf Van Empel

Sebastianus Adrianus Goorden

Haico Victor Kok

Leon Martin Levasier

Roy Werkman

Willem Jurrianus Venema

Igor Matheus Petronella Aarts

Stefan Carolus Jacobus Antonius Keij

Marc Hauptmann

Rene Oesterholt

Erik Johan Koop

Bartolomeus Petrus Rijpers

Laurent Khuat Duy

Rizvi Rahman

Cornelis Johannes Henricus Lambregts

Amir Bin Ismail

Ekaterina Mikhailovna Viatkina

Samee Ur Rehman

Vassili Demergis

Robert Franken

Maaike Van T Westeinde

Raheleh Pishkari

Dimitra Sarri

David Warren Burry

Koenraad Stephan Silvester Salden

Allwyn Boustheen

Hakki Ergun Cekli

Jozef Benschop

Lukasz Macht

A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

Method for controlling a semiconductor manufacturing process

A method for a metrology process, the method includes obtaining first measurement data relating to a first set of measurement conditions and determining a first measurement recipe based on the first measurement data. At least one performance indicator is determined from one or more components of the first measurement data obtained from a component analysis or statistical decomposition. Alternatively, at least one performance indicator is determined from a comparison of one or more first measurement values relating to the first measurement recipe and one or more second measurement values relating to a second measurement recipe, where second measurement recipe is different to the first measurement data and relates a second set of measurement conditions, the second set of measurement conditions being different to the first set of measurement conditions.

Metrology method and associated metrology and lithographic apparatuses

A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.

Method of measuring an alignment mark or an alignment mark assembly, alignment system, and lithographic tool

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.

Method of controlling a lithographic apparatus and device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

A lithographic technique that involves obtaining values of parameters of a substrate deformation model, wherein the values are based on positional data obtained from an alignment system for a lithographic apparatus; modifying the values using a mapping operation, wherein the mapping operation is based on a correlation found between the parameters and overlay data for a previous set of substrates; and generating, based on the modified values, electronic data adapted to configure the lithographic apparatus.

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

A method of measuring a position of an alignment target on a substrate using an optical system. The method includes measuring a sub-segmented target by illuminating the sub-segmented target with radiation and detecting radiation diffracted by the sub-segmented target using a detector system to obtain signals containing positional information of the one sub-segmented target. The sub-segmented target has structures arranged periodically in at least a first direction, at least some of the structures including smaller sub-structures, and each sub-segmented target is formed with a positional offset between the structures and the sub-structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of an alignment target which is corrected for the unknown component of the positional offset.

Position measuring method of an alignment target

A level sensor arrangement is useable for measuring a height of a surface of a substrate in a lithographic apparatus. The level sensor arrangement is provided with a light source emitting detection radiation towards the substrate, and a detector unit for measuring radiation reflected from the substrate in operation. The light source is arranged to emit detection radiation in a wavelength range in which a resist to be used for processing the substrate in the lithographic apparatus is sensitive.

Level sensor arrangement for lithographic apparatus and device manufacturing method

A level sensor for measuring a position of a surface of a substrate includes a projection unit including an emitter for emitting a radiation beam towards the substrate and a projection grating including a measurement grating and an aperture, such that the radiation beam incident on the projection grating is divided into a measurement radiation beam and a capture radiation beam. The level sensor further includes a detection unit including a first and second measurement detector, a first and second capture detector, a detection grating, and a first and second optical unit. The detection grating includes a ruled grating with multiple rules, which direct radiation towards the first and second measurement detector via the first and second optical unit, and a capture element directing radiation towards the first and second capture detector via the first and second optical unit.

Level sensor, lithographic apparatus, and substrate surface positioning method

Embodiments of the invention relate to a method for determining exposure settings for a target field on a substrate in a lithographic exposure process, including providing calibration data by determining the position of a calibration field in a first direction at a plurality of calibration positions in a second and third direction relative to the position of the calibration field. The method also includes providing production data by establishing the position on the substrate of the target field in the second and third direction and by measuring the position of the exposure field in the first direction at least one measurement position relative to the position of the exposure field in the second and third direction.

Method for determining exposure settings, lithographic exposure apparatus, computer program and data carrier

A method is provided for positioning at least one target portion of a substrate with respect to a focal plane of a projection system. The method comprises performing height measurements of at least part of the substrate to generate height data, using predetermined correction heights to compute corrected height data for the height data. The method further comprises positioning the target portion of the substrate with respect to the focal plane of the projection system at least partially based on the corrected height data.

Method for positioning a target portion of a substrate with respect to a focal plane of a projection system

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Ralph Brinkhof