Micron Technology Incorporated

T-ram Semiconductor, Inc.

Rajesh N Gupta

Farid Nemati

Scott T Robins

Srinivas Pulugurtha

Chandra V Mouli

Kamal M Karda

Kevin J Yang

Seshadri Kolluri

Sanh D Tang

Haitao Liu

Si-Woo Lee

Marc Laurent Tarabbia

Wolfgang Mueller

Sourabh Dhir

Andrew Edward Horch

Hyun-Jin Cho

Maxim Ershov

Binoy Jose Panakkal

As described herein, an apparatus may include a memory that includes a first portion, a second portion, and a third portion. The apparatus may also include a memory controller that includes a first logical-to-physical table stored in a buffer memory. The memory controller may determine that the first portion is accessed sequential to the second portion and may adjust the first logical-to-physical table to cause a memory transaction performed by the memory controller to access the third portion as opposed to the first portion.

Systems and methods for generating logical-to-physical tables for wear-leveling

Memory operations with consideration for wear leveling

Some embodiments include a memory cell with two transistors and one capacitor. The transistors are a first transistor and a second transistor. The capacitor has a first node coupled with a source/drain region of the first transistor, and has a second node coupled with a source/drain region of the second transistor. The memory cell has a first body region adjacent the source/drain region of the first transistor, and has a second body region adjacent the source/drain region of the second transistor. A first body connection line couples the first body region of the memory cell to a first reference voltage. A second body connection line couples the second body region of the memory cell to a second reference voltage. The first and second reference voltages may be the same as one another, or may be different from one another.

Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages

A measurement circuit may include a transistor having a first terminal, a second terminal, and a third terminal, wherein the first terminal is coupled to a first reference voltage. The measurement circuit may further include a first operational amplifier including a first input coupled to the second terminal of the transistor and an output coupled to the third terminal of the transistor. The first operational amplifier may further include a second input configured to receive a second reference voltage. The measurement circuit may also include a first unity-gain voltage follower including a second operational amplifier having a first input coupled to the first input of the first operational amplifier. Methods of measuring a threshold voltage, semiconductor devices, and electronic systems are also described.

Methods and apparatuses for threshold voltage measurement and related semiconductor devices and systems

Some embodiments include gated bipolar junction transistors. The transistors may include a base region between a collector region and an emitter region; with a B-C junction being at an interface of the base region and the collector region, and with a B-E junction being at an interface of the base region and the emitter region. The transistors may include material having a bandgap of at least 1.2 eV within one or more of the base, emitter and collector regions. The gated transistors may include a gate along the base region and spaced from the base region by dielectric material, with the gate not overlapping either the B-C junction or the B-E junction. Some embodiments include memory arrays containing gated bipolar junction transistors. Some embodiments include methods of forming gated bipolar junction transistors.

Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors

Apparatus and methods are disclosed, including a method that performs a first operation on a first resistance variable element using a common source voltage, a first data line voltage and a first control gate voltage, and then performs a second operation on a second resistance variable element using the common source voltage, a second data line voltage and a second control gate voltage. Additional apparatus and methods are described.

Resistance variable element methods and apparatuses

A method for memory device fabrication includes forming a plurality of continuous fins on a substrate. An insulator material is formed around the fins. The continuous fins are etched into segmented fins to form exposed areas between the segmented fins. An insulator material is formed in the exposed areas wherein the insulator material in the exposed areas is formed higher than the insulator material around the fins. A metal is formed over the fins and the insulator material. The metal formed over the exposed areas is formed to a shallower depth than over the fins.

Passing access line structure in a memory device

Some embodiments include thyristors having first and second electrode regions, first and second base regions, and material having a bandgap of at least 1.2 eV in at least one of the regions. The first base region is between the first electrode region and the second base region, and the second base region is between the second electrode region and the first base region. The first base region interfaces with the first electrode region at a first junction, and interfaces with the second base region at a second junction. The second base region interfaces with the second electrode region at a third junction. A gate is along the first base region, and in some embodiments does not overlap either of the first and second junctions. Some embodiments include methods of programming thyristors, and some embodiments include methods of forming thyristors.

Thyristors, methods of programming thyristors, and methods of forming thyristors

Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending along a substrate to a digit line contact pillar, a body connection line extending along the substrate to a body connection line contact pillar, a body region disposed on the body connection line, an electrode disposed on the body region, and a word line extending to form a gate to the body region. A method for operation includes applying a first voltage to the body connection line, and applying a second voltage to the word line to cause a conductive channel to form through the body region. A memory cell array may include a plurality of vertical access devices.

Apparatuses having a vertical memory cell

Arrays of memory cells having a common gate terminal and methods of operating and forming the same are described herein. As an example, an array of memory cells may include a group of memory cells each having a resistive storage element coupled to a select device. Each select device includes a first terminal, a second terminal, and a gate terminal, where the gate terminal is common to each memory cell of the group.

Memory cells having a common gate terminal

Apparatuses and methods can include write schemes for a thyristor memory cell in which an access pulse applied to the gate of the thyristor memory cell is adjusted relative to the data pulse to write data into the thyristor memory cell. Some of the write schemes may substantially reduce or eliminate an unselected data line disturb. In various embodiments, the thyristor memory cell can be structured with two control nodes and its cathode or anode coupled to a reference voltage node common to all thyristor memory cells in a memory array. Additional apparatuses and methods are disclosed.

Growing community of inventors

Karnataka, India

Rajesh N Gupta