Intel Corporation

Rajen C Dias

Biju Chandran

Yoshihiro Tomita

Edward Rudolph Prack

Sergei L Voronov

Mihir A Oka

Tony Dambrauskas

Lars D Skoglund

Danish Faruqui

Yongmei Liu

David K Wilkinson, Jr

Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or 'inactive' side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Laser die backside film removal for integrated circuit (IC) packaging

An apparatus and system, as well as fabrication methods therefor, may include a unitary, substantially uniformly distributed transfer material coupled to a carrier material.

Thermal interface apparatus, systems, and fabrication methods

A microelectronic assembly including a plurality of conductive columns extending from a bond pad of a microelectronic device and a conductive adhesive on a land pad of a carrier substrate electrically attached to the conductive columns.

Microelectronic device interconnects

A microelectronic device and methods of fabricating the same comprising a microelectronic die having an active surface, a back surface, and at least one side. The microelectronic die side comprises a trench sidewall, a lip and a channel sidewall. A metallization layer is disposed on the microelectronic die back surface and the trench sidewall.

Backside metallization on sides of microelectronic dice for effective thermal contact with heat dissipation devices

A microelectronic device and methods of fabricating the same comprising a microelectronic die having an active surface, a back surface, and at least one side. The microelectronic die side comprises a beveled sidewall and a channel sidewall. A metallization layer is disposed on the microelectronic die back surface and the beveled sidewall.

Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices

A die with flip chip bumps including at least one layer of filled underfill on the die surface and a layer of unfilled underfill over the filled underfill and the flip chip bumps. An IC assembly including a substrate with bumps and at least one layer of filled underfill on the substrate surface and a layer of unfilled underfill over the filled underfill and the bumps. A die or IC assembly with a plurality of filled underfill layers with differing CTE. Methods of making the dies and IC assemblies.

Growing community of inventors

Phoenix, AZ, United States of America

Rajen C Dias