Hynix Semiconductor Inc.

Skhynix Inc.

Qwan Ho Chung

Woong Hee Lee

Jin Ho Bae

Seung Jee Kim

Sang Yong Lee

Jong Hyun Nam

Si Han Kim

Kyoung Sook Park

Yeo Song Yun

Ki Jun Kim

Sang Joon Lim

Jong Woo Yoo

Seong Cheol Shin

Seung Hyun Lee

Jong Hyun Kim

Sung Woo Han

Seung Taek Yang

Kyu Won Lee

Bok Gyu Min

Il Hwan Cho

Sung Ho Hyun

Myung Gun Park

Eul Chul Jang

Jae Won Shin

Seong Kweon Ha

Package substrates are provided. The package substrate may include a power line and a ground line on a first surface of a substrate body; a plurality of signal lines on the first surface between the power line and the ground line; and a lower ground pattern and a lower power pattern positioned on a second surface of the substrate body opposite to the first surface. The lower ground pattern may be disposed to be opposite to the power line and the lower power pattern may be disposed to be opposite to the ground line. Related semiconductor packages are also provided.

Electrical characteristics of package substrates and semiconductor packages including the same

A method of manufacturing a semiconductor package includes: forming a strip substrate including a plurality of unit substrates, each being provided with a first connection pad and a second connection pad on a first surface of the unit substrate and each unit substrate being electrically and physically isolated from each other with the intervention of saw lines, first ground connection pads formed on the respective unit substrates, each of the first ground connection pads being electrically coupled with the first connection pad over the respective unit substrates, second ground connection pads formed on the saw line on the first surface side of the unit substrates and electrically isolated from the unit substrates, and test wiring formed on the saw line, the test wiring being electrically isolated from the unit substrates and electrically coupled with the second ground connection pads; and attaching semiconductor chips onto the respective unit substrates.

Semiconductor package and method for manufacturing the same

A semiconductor package includes a dielectric layer in which a chip is embedded, interconnection parts disposed on a first surface of the dielectric layer, through connectors each of which penetrates a portion of the dielectric layer over the chip to electrically couple the chip to a corresponding one of the interconnection parts, a shielding plate covering a second surface of the dielectric layer that is opposite to the first surface, and a shielding encapsulation part connected to one of the interconnection parts and covering sidewalls of the dielectric layer. The shielding encapsulation part includes a portion contacting the shielding plate.

Semiconductor package having EMI shielding and method of fabricating the same

A package substrate includes a core layer having a first surface and a second surface which are opposite to each other, a ball land pad disposed on the first surface of the core layer, an opening that penetrates the core layer to expose the ball land pad, and a dummy ball land disposed on the second surface of the core layer to surround the opening. The dummy ball land includes at least one sub-pattern and at least one vent hole. Related semiconductor packages and related methods are also provided.

Substrates having ball lands, semiconductor packages including the same, and methods of fabricating semiconductor packages including the same

A package stacked device may include a first packaging body layer having a first chip embedded therein, and a second packaging body layer positioned under the first packaging body layer and having a second chip embedded therein. The package stacked device may also include a first connection unit protruding from a first bottom surface of the first packaging body layer, a second connection unit protruding from a second top surface of the second packaging body layer, a first covering layer providing a first opening to expose the top surface of the second connection unit and substantially covering the second top surface of the second packaging body layer, and a first adhesive layer substantially covering the exposed top surface of the second connection unit within the first opening. The first connection unit may be inserted into the first opening and connected to the first adhesive layer.

Package stacked device

An electronic device package includes a bump having a post disposed on a contact portion of a semiconductor chip and an enlarged portion laterally protruded from an upper portion of the post; an interconnection portion having a locking portion that substantially surrounds the enlarged portion and an upper sidewall of the post; and a dielectric layer substantially surrounding the bump and the locking portion to separate the interconnection portion from the semiconductor chip.

Electronic device packages having bumps and methods of manufacturing the same

Embedded packages are provided. The embedded package includes a chip attached to a first surface of a core layer, a plurality of bumps on a surface of the chip opposite to the core layer, and a first insulation layer surrounding the core layer, the chip and the plurality of bumps. The first insulation layer has a trench disposed in a portion of the first insulation layer to expose the plurality of bumps.

Embedded packages, methods of fabricating the same, electronic systems including the same, and memory cards including the same

An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the to semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump.

Embedded package and method for manufacturing the same

A bump for a semiconductor package includes: a first bump formed on a semiconductor chip and having at least two land parts and a connection part which connects the land parts and has a line width smaller than the land parts; and a second bump formed on the first bump and projecting on the land parts of the first bump in shapes of a hemisphere.

Bump for semiconductor package, semiconductor package having bump, and stacked semiconductor package

A stack package includes a core layer having a first surface and a second surface, and including first circuit wiring lines; a first semiconductor device disposed on the second surface of the core layer; a first resin layer formed on the second surface of the core layer to cover the first semiconductor device; second circuit wiring lines formed on the first resin layer and electrically connected with the first semiconductor device; a second semiconductor device disposed over the first resin layer including the second circuit wiring lines and electrically connected with the second circuit wiring lines; a second resin layer formed on the second circuit wiring lines and the first resin layer to cover the second semiconductor device; and a plurality of via patterns formed to pass through the first resin layer and the core layer and electrically connecting the first circuit wiring lines and the second circuit wiring lines.

Stack type semiconductor package

An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to is the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump.

A substrate for a semiconductor package is provided having first and second core layers defining a cavity having an adhesive member and sized and shaped to receive a semiconductor chip. The semiconductor package further having a connection member formed on a bond finger and connected to a via pattern formed through the first and second core layers. A stack package is also provided having multiple substrates.

Substrate for semiconductor package, semiconductor package including the same, and stack package using the semiconductor package

A stacked semiconductor package having a unit package, cover substrates, adhesive members and connection electrodes is presented. The unit package includes a substrate, a first circuit pattern and a second circuit pattern. The first circuit pattern is disposed over an upper face of the substrate. The second circuit pattern is disposed over a lower face of the substrate. The lower and upper faces of the substrate oppose each other. The first and second semiconductor chips are respectively electrically connected to the first and second circuit patterns. The cover substrates are opposed to the first semiconductor chip and the second semiconductor chip. The adhesive members are respectively interposed between the unit package and the cover substrates. The connection electrodes pass through the unit package, the cover substrates and the adhesive members and are electrically connected to the first and second circuit patterns.

Method of fabricating semiconductor package

The substrate for a semiconductor package includes a substrate body having a first surface and a second surface opposite to the first surface. Connection pads are formed near an edge of the first surface. Signal lines having conductive vias and first, second, and third line parts are formed. The first line parts are formed on the first surface and are connected to the connection pads and the conductive vias, which pass through the substrate body. The second line parts are formed on the first surface and connect to the conductive vias. The third line parts are formed on the second surface and connect to the conductive vias. The second and third line parts are formed to have substantially the same length. The semiconductor package utilizes the above substrate for processing data at a high speed.

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Gyeonggi-do, South Korea

Qwan Ho Chung