Applied Materials, Inc.

Quyen Pham

Lawrence C Lei

Yu Wen Chang

Joel M Huston

Siqing Lu

Paul F Smith

Kenneth Tsai

Cecilia Martner

Yu Ping Gu

Joseph Yudovsky

Chien-Teh Kao

Ronald Lloyd Rose

Calvin R Augason

Gabriel Lorimer Miller

Tung Bach

G Lorimer Miller

A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

Method and apparatus for measuring a thickness of a layer of a wafer

Apparatus and method of dynamically measuring thickness of a layer of a substrate

Method and apparatus for dynamically measuring the thickness of an object

An effluent monitoring apparatus comprising an energizing cell adapted to receive an effluent, a gas energizer that is capable of energizing the effluent in the cell thereby emitting a radiation, a radiation permeable window that is spaced apart from the wall of the cell by a distance d that is sufficiently high to reduce a deposition of effluent residue from the energized gas on the window , and a detector to detect the radiation.

Monitoring an effluent from a chamber

An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.

Method for improved remote microwave plasma source for use with substrate processing system

Apparatus for improved remote microwave plasma source for use with

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Sunnyvale, CA, United States of America

Quyen Pham