Hia, Inc.

Advanced Micro Devices Corporation

Intevac, Inc.

Quang N Tran

Samuel Dacke Harkness, Iv

Khoi A Phan

An apparatus has a keeper plate with a keeper plate outer perimeter. An annular magnet array with an annular magnet array outer perimeter is coincident with the keeper plater outer perimeter. An inner top magnet is positioned on a centerline of a first side of the keeper plate and an inner bottom magnet is positioned on the centerline of a second side of the keeper plate. The inner top magnet is of a first magnetic orientation and the annular magnet array and the inner bottom magnet have a second magnetic orientation opposite the first magnetic orientation to form a magnetic field environment that provides plasma confinement of ionizing electrons which causes a gas operative as a reactive gas and sputter gas to become ionized and subsequently be directed to a target cathode while simultaneously causing the ionization of sputtered species which are dispersed across a substrate.

Multifocal magnetron design for physical vapor deposition processing on a single cathode

An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.

An apparatus has a primary cathode configured for free space interaction with a substrate operative as an anode. A first annular cathode faces a second annular cathode. The primary cathode, the first annular cathode, the second annular cathode are axially aligned. The outer diameters of the first annular cathode and the second annular cathode correspond to the outer diameter of the primary cathode. The primary cathode provisions deposited material on the substrate with controllable plasma density to levels above 1&#xd7;10m, with ignition capability above 0.05 Pa.

Apparatus for enhanced physical vapor deposition

An edge bead removal system and method is provided that employs a nozzle for applying edge bead removal solvent to an edge bead of a photoresist material layer disposed on a wafer. The nozzle eliminates solvent splash by lowering the angle of dispense to less than 20&deg; as well as providing more degrees of freedom to the nozzle arm adjustments. Adjustment screws and a built-in protractor provide precision in setting the application angle. The nozzle includes a clamp design having a nozzle body clamp which holds the nozzle and a main shaft with a protractor assembly for up and down angle adjustments. A support bracket is coupled to the protractor assembly and allows for pivoting and side to side movement of the protractor assembly and the support bracket with respect to one another. A clamp connects a main arm structure that moves the entire edge bead removal nozzle assembly over the wafer.

Growing community of inventors

San Jose, CA, United States of America

Quang N Tran