Texas Instruments Corporation

Qing Ran

Joseph O Liu

Yuan Zhang

Venkataramanan Kalyanaraman

Jeniffer Otero Aspuria

Gelline Joyce Untalan Vargas

Hao Zhang

Yang Liu

A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.

Splash resistant laser wafer singulation by crack length control

Growing community of inventors

Sichuan, China

Qing Ran