Yangtze Memory Technologies Co., Ltd.

Qiangmin Wei

Zhiliang Xia

Jun Liu

Yi Bu Li

Lei Li

Bingguo Wang

Chao Shen

Hai Song

Yu Li

Yingfei Wang

Shiyan Wu

Junzhan Liu

Aspects of the disclosure provide a method of tilting characterization. The method includes measuring a first tilting shift of structures based on a first disposition of the structures. The structures are formed in a vertical direction on a horizontal plane of a product. A second tilting shift of the structures is measured based on a second disposition of the structures. The second disposition is a horizontal flip of the first disposition. A corrected tilting shift is determined based on the first tilting shift and the second tilting shift.

Method for tilting characterization by microscopy

Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.

Methods for polysilicon characterization

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Wuhan, China

Qiangmin Wei