Applied Materials, Inc.

Applied Material, Inc.

Priyanka Dash

Alexandros T Demos

Deenesh Padhi

He Ren

Bhaskar Kumar

Mehul B Naik

Sanjeev Baluja

Ganesh Balasubramanian

Kelvin Chan

Amit Kumar Bansal

Kang Sub Yim

Kalyanjit Ghosh

Tejas Ulavi

Zhijun Jiang

Mayur G Kulkarni

Shailendra Srivastava

Kaushik Comandoor Alayavalli

Srinivas Guggilla

Yuxing Zhang

Shawyon Jafari

Yusheng Zhou

Mahendra Chhabra

Qiang Ma

Daniel Hwung

Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

System and method for substrate processing chambers

A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

Interconnect integration for sidewall pore seal and via cleanliness

Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

Enhancement of modulus and hardness for UV-cured ultra low-k dielectric films

A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.

Aluminum nitride barrier layer

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Menlo Park, CA, United States of America

Priyanka Dash