Genus, Inc.

Other

Gm Global Technolgoy Operations, Inc.

Novellus Systems Incorporated

Prasad N Gadgil

Thomas E Seidel

Kenneth Brian Doering

Carl J Galewski

Mei Cai

Gayatri Vyas Dadheech

Krishnan Shrinivasan

Arkadiy I Shimanovich

A powder coating apparatus reactor includes a loading port for a powder material, an inlet for one or more coating precursors, and a reaction chamber having an inner surface and a plurality of axial baffles. Each axial baffle extends inwardly from the inner surface of the reaction chamber of the rotary vessel. The plurality of axial baffles is configured to keep the powder material flowing within the reaction chamber during rotation of the rotary vessel to facilitate contact between the powder material and the one or more coating precursors. The powder coating apparatus further includes a rotary vacuum seal located at the loading port. The powder coating apparatus also includes a motor capable of actuating the rotary vessel about a center axis for rotation during reaction of the powder material with the coating precursors in the reaction chamber. Methods for coating powder materials with such a reactor are also provided.

Particle reactor for atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes

This invention relates to process sequence by high-speed atomic layer chemical vapor processing that includes deposition for diffusion barriers in the etched features on substrate followed by gap fill and subsequent in-situ removal of the blanket films on the top by plasma enhanced vapor phase processes. The apparatus and process sequences employed in these processing scheme allows the practitioner to complete all vapor phase process sequences of diffusion barrier deposition, gap fill and planarization of copper and diffusion barrier planarization. In case of copper metallization scheme, vapor phase gap fill can be employed to replace electrochemical deposition of copper and removal of copper and the diffusion barrier by vapor phase reactions can replace chemical-mechanical-polishing. Furthermore, such a processing scheme can be employed to deposit gate level dielectric layer, shallow trench isolation and also to form first metal contact plugs with a suitable barrier at the front end of line processing.

Method for filling of a recessed structure of a semiconductor device

An atomic layer deposition (ALD) reactor ( ) is disclosed that includes a substantially cylindrical chamber ( ) and a wafer substrate ( ) mounted within the chamber ( ). The ALD reactor ( ) further includes at least one injection tube ( ) mounted within the chamber ( ) having a plurality of apertures ( ) along one side that directs gas emanating from the apertures ( ) towards the wafer substrate ( ). While gas is pulsed from the injection tube ( ), either the water substrate ( ) or the injection tube ( ) is continuously rotated in a longitudinal plane within the chamber ( ) to ensure complete and uniform coverage of the wafer substrate ( ) by the gas.

Apparatus for atomic layer chemical vapor deposition

Methods and an apparatus for providing a non-contact probe for accurately measuring the temperature of a substrate in a process chamber are disclosed. One exemplary apparatus is a processing chamber, which includes a heating source, where the heating source heats the substrate. Also included is a window maintained at a substantially constant temperature. The window allows only a first wavelength spectrum of energy emitted from the heating source to pass. In addition, the window isolates the heating source from an internal region of the processing chamber. A probe configured to detect a second wavelength spectrum of energy emitted directly from the substrate is included. The energy emitted directly from the substrate corresponds to a temperature of the substrate, and the temperature of the substrate is provided to the controller, which adjusts an intensity of the heating source based on a set point temperature for the substrate.

Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry

A processing station adaptable to standard cluster tools has a vertically-translatable pedestal having an upper wafer-support surface including a heater plate adapted to be plugged into a unique feedthrough in the pedestal. At a lower position for the pedestal wafers may be transferred to and from the processing station, and at an upper position for the pedestal the pedestal forms an annular pumping passage with a lower circular opening in a processing chamber. A removable, replaceable ring at the lower opening of the processing chamber allows process pumping speed to be tailored for different processes by replacing the ring. In some embodiments the pedestal also has a surrounding shroud defining an annular pumping passage around the pedestal. A unique two-zone heater plate is adapted to the top of the pedestal, and connects to a unique feedthrough allowing heater plates to be quickly and simply replaced. In some embodiments the top of the processing chamber is removable allowing users to remove either pedestals or heater assemblies. Or both, through the open top of a processing station. In preferred embodiments the system is adapted to atomic layer deposition processing.

Processing chamber for atomic layer deposition processes

A low profile, compact atomic layer deposition reactor (LP-CAR) has a low-profile body with a substrate processing region adapted to serve a single substrate or a planar array of substrates, and a valved load and unload port for substrate loading and unloading to and from the LP-CAR. The body has an inlet adapted for injecting a gas or vapor at the first end, and an exhaust exit adapted for evacuating gas and vapor at the second end. The LP-CAR has an external height no greater than any horizontal dimension, and more preferably no more than two-thirds any horizontal dimension, facilitating a unique system architecture. An internal processing region is distinguished by having a vertical extent no greater than one fourth the horizontal extent, facilitating fast gas switching. In some embodiments one substrate at a time is processed, and in other embodiments there may be multiple substrates arranged in the processing region in a planar array. The compact reactor is distinguished by individual injectors, each of which comprise a charge tube formed between a charge valve and an injection valve. The charge valve connects the charge tube to a pressure regulated supply, and the injection valve opens the charge tube into the compact reactor. Rapidly cycling the valves injects fixed mass-charges of gas or vapor into the compact reactor. Multiple such compact reactors are stacked vertically, interfaced into a vacuum handling region having a Z-axis robot and a load/unload opening.

Growing community of inventors

Santa Clara, CA, United States of America

Prasad N Gadgil