Lam Research Corporation

Pragna Nannapaneni

Sanjay Gopinath

Xiaolan Ba

Novy Sastrawati Tjokro

Sema Ermez

Ruopeng Deng

Tianhua Yu

Juwen Gao

Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.

Tungsten deposition

Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

Rapid flush purging during atomic layer deposition

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San Jose, CA, United States of America

Pragna Nannapaneni