Applied Materials, Inc.

Praburam Gopal Raja

Anantha K Subramani

Xianmin Tang

Muhammad M Rasheed

Rongjun Wang

Mingwei Zhu

Cheng-Hsiung Matt Tsai

Omkaram Nalamasu

Vivek Agrawal

Dinesh Saigal

Nag B Patibandla

Philip Allan Kraus

John C Forster

Thomas B Brezoczky

Steven Victor Sansoni

Bencherki Mebarki

Prashanth Kothnur

John Joseph Mazzocco

Farzad Houshmand

Yang Guo

Nag B Patibandia

Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

Methods and apparatus for producing low angle depositions

Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

PVD buffer layers for LED fabrication

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Santa Clara, CA, United States of America

Praburam Gopal Raja