Lsi Logic Corporation

Ponce Saopraseuth

Derryl D J Allman

Nabil Mansour

Hemanshu D Bhatt

David Pritchard

Sam Gu

Steve Reder

A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.

Capacitor with stoichiometrically adjusted dielectric and method of fabricating same

A process for forming a low k carbon-doped silicon oxide dielectric material (lkc-dsodm) on an integrated circuit structure is characterized by improved planarity and good gap fill in high aspect ratio regions of the integrated circuit structure, as well as improved film strength and adherence, and less byproducts trapped in the film. The process comprises: depositing a plurality of layers of lkc-dsodm on an integrated circuit structure in a reactor; and pausing after depositing each layer of lkc-dsodm and before depositing a further layer of lkc-dsodm. The process can further include first forming a base or barrier layer of a silicon-rich and nitrogen-rich dielectric material over the integrated circuit structure, plasma etching the upper surface of the barrier layer to facilitate adhesion of the subsequently deposited lkc-dsodm to the barrier layer, and then, before depositing the first layer of lkc-dsodm, cooling the etched barrier layer down to within 10&deg; C. or less of the subsequent deposition temperature used for formation of the film of lkc-dsodm. In another aspect of the invention the pausing step further includes, before deposition of the next layer of lkc-dsodm, flowing a source of non-reactive gas over the surface of the newly deposited layer of lkc-dsodm to facilitate outgassing and removal of byproducts resulting from the preceding formation and deposition of lkc-dsodm.

Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure

Control of a reaction between a peroxide oxidizing agent and a carbon-substituted silane to form a low k carbon-containing silicon oxide dielectric material is achieved, in a first embodiment, by adding, to the carbon-substituted silane reactant, silane (SiH ), to accelerate the process for forming a low k carbon-containing silicon oxide dielectric material by reaction of the carbon-substituted silane/silane mixture with hydrogen peroxide. Also, control of a reaction between a peroxide oxidizing agent and a carbon-substituted silane to form a low k carbon-containing silicon oxide dielectric material is achieved by controlling the ratio of the flow of the hydrogen peroxide reactant and the flow of the reactant mixture of carbon-substituted silane and unsubstituted silane into the reaction chamber though structural modification of the faceplate (showerhead) through which the reactants flow into the chamber.

Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactants

A process is disclosed for removing a photoresist mask used to form openings in an underlying layer of low k carbon-doped silicon oxide dielectric material of an integrated circuit structure formed on a semiconductor substrate, which comprises exposing the photoresist mask in a plasma reactor to a plasma formed using a reducing gas until the photoresist mask is removed. In a preferred embodiment the reducing gas is selected from the group consisting of NH , H , forming gas, and a mixture of NH and H . The process further provides for the removal of etch residues by first contacting the low k carbon-doped silicon oxide dielectric material with a solvent capable of dissolving and/or removing etch residues left from forming the openings in the low k dielectric material, and from removing the photoresist mask used to form the openings in the low k carbon-doped silicon oxide dielectric material; and then annealing the substrate in an annealing chamber at a temperature sufficient to remove liquid and gaseous byproducts from the low k carbon-doped silicon oxide dielectric material.

Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal

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Gresham, OR, United States of America

Ponce Saopraseuth