United Microelectronics Corp.

Po-Sheng Lee

Wen-Fang Lee

Yu-Hsien Lin

Chien-En Hsu

Chih-Nan Liang

A method of fabricating a dynamic random access memory is provided. First, a substrate at least having a memory device area and a peripheral device area is provided, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area. A first oxide layer is formed on the substrate of the peripheral device area, and a passing gate isolation structure is formed on the substrate of the memory device area at the same time. A second oxide layer is formed on the substrate of the memory device area. And a first transistor is formed on the substrate of the memory device area, a passing gate is formed on the passing gate isolation structure, and a second transistor is formed on the substrate of the peripheral device area.

Method of fabricating a dynamic random access memory

A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO, and then draining the water containing COto expose the substrate in an atmosphere of CO. The second rinse step includes rinsing the substrate using deionized water containing CO.

Growing community of inventors

Hsinchu County, Taiwan

Po-Sheng Lee