Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Chung Cheng

Li-Jui Chen

Shang-Chieh Chien

Tzung-Chi Fu

Bo-Tsun Liu

Chi Ming Yang

Han-Lung Chang

Chieh Hsieh

Chun-Lin Louis Chang

Chih-Tsung Shih

Ching-Juinn Huang

Ssu-Yu Chen

Tsung-Yen Lee

Che-Chang Hsu

Hsiao-Lun Chang

Jen-Yang Chung

Chun-Chia Hsu

Shang-Ying Wu

Jen-Hao Yeh

Chun-Kuang Chen

Chin-Hsiang Lin

Kai-Hsiung Chen

Fu-Jye Liang

Shih-Chang Shih

Hung-Wen Cho

Chia-Chen Chen

Chueh-Chi Kuo

Kuan-Hung Chen

Wei-Shin Cheng

Shih-Yu Tu

Wei-Chih Lai

Sheng-Ta Lin

Sheng-Kang Yu

Yen-Shuo Su

Shao-Hua Wang

Zi-Wen Chen

Kuei-Shun Chen

Ming-Hsun Tsai

Hung-Chih Hsieh

Wei-Chun Yen

Yu-Chih Chen

Yu-Ching Wang

En Hao Lai

Long-Yi Chen

Jia-Hong Chu

Hsin-Chin Lin

Hao-Yu Lan

Anthony Yen

Hsin-Feng Chen

Cheng-Hao Lai

Meng-Wei Chen

Yen-Hsun Chen

Ting-Ya Cheng

Jhan-Hong Yeh

Tsung-Hsun Lee

Alan Tu

Shao-Wei Luo

Chun-Kai Chang

Li-Kai Cheng

Cheng-Kuan Wu

Chi-Wen Lai

Chia-Ching Liang

Yu De Liou

Yu Sheng Chiang

Siao-Chian Huang

Yu-Chih Huang

Huai-Tei Yang

Chih-Ming Ke

Yen-Liang Chen

Hsin-Liang Chen

Chia-Yu Lee

Cheng-Chieh Chen

Wen-Chih Wang

Ming-Fa Wu

Jeng-Yann Tsay

Tao-Hsin Chen

Kai Wu

Jian-Yuan Su

Chao-Chen Chang

Henry Yee Shian Tong

Henry Yee-Shian Tong

Louis Chun-Lin Chang

Henry Tong Yee Shian

Chia-Hsin Chou

Chia-Hao Hsu

Szu-An Wu

Chun Che Lin

Chun-Che Lin

Chi-Kang Chang

Yu-Kuang Sun

Kai-Chieh Chang

Liu Bo-Tsun

Hung-Ting Pan

Jen-hao Yeh

Hsin-Chun Chiang

Yung-Teng Yu

Wei-Ting Yi

Jen-Hung Hsiao

Hsiang-Yu Su

Yun-Heng Tseng

An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

EUV radiation source apparatus for lithography

A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and/or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

Particle image velocimetry of extreme ultraviolet lithography systems

An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Each through hole has a minimum depth at a first position and a maximum depth at a second position. The first position is closer to a center of the cover than the second position.

Extreme ultraviolet lithography system

A particle removal apparatus is provided. The apparatus includes a reticle holder configured to hold a reticle, a robotic arm, and a particle removal device disposed on the robotic arm. The particle removal device includes a solution spraying module, a sucking module, and a baffle. The robotic arm and the particle removal device are configured to align with a particle on the backside of the reticle. The solution spraying module is configured to spray a solution onto the particle to remove the particle. The baffle is configured to be disposed over the backside of the reticle to define enclosed area that encompasses the particle to be removed. The sucking module is configured to suck the solution on the reticle with the particles being removed.

Particle removal apparatus

The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Methods and systems for aligning master oscillator power amplifier systems

A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.

Droplet generator and method of servicing extreme ultraviolet imaging tool

In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Width adjustment of EUV radiation beam

A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Method for performing lithography process, light source, and EUV lithography system

A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Apparatus and method for generating extreme ultraviolet radiation

An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnHto Sn.

EUV light source and apparatus for lithography

A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.

Lithography system and method

A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Shock wave visualization for extreme ultraviolet plasma optimization

A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.

Control of dynamic gas lock flow inlets of an intermediate focus cap

A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Thicknesses of edges of the cover is different from a thickness of a center of the cover.

Growing community of inventors

Chiayi County, Taiwan

Po-Chung Cheng