Intel Corporation

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Yoshihiro Tezuka

Tsung-Ein Tsai

William Wong

Adam Seeger

The present disclosure is directed to a EUV mask measurement tool having a source assembly that generates a high power extreme ultraviolet (EUV) light beam, a detector assembly including a projection optics system and a CCD camera, a stage for supporting a patterned mask, the pattern mask including a plurality of predetermined test sites, a processor programmed to determine a site specific best focus plane for each of the plurality of predetermined test sites on the patterned mask, and a program module to generate instructions to move the stage to the best focus plane for each of the plurality of predetermined test sites on the patterned mask. In addition, a method for generating a site specific best focus plane for each of the plurality of predetermined test sites using a continuous scanning process that provides a continuous image output from the test site.

Measurement tool and method for lithography masks

A variable optical attenuator multiplexer having at least one thermal isolating optical joint. The variable optical attenuator multiplexer including a plurality of planar lightwave circuit components, such as, for example a combination of an array waveguide grating, a variable optical attenuator, and/or a power monitor. The planar lightwave circuit components are joined with an optical adhesive. The components may be thermally isolated by the formation of a widened space or gap between the component joints, and/or by creating a trench in the optical adhesive.

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San Jose, CA, United States of America

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