Taiwan Semiconductor Manufacturing Comp. Ltd.

Ping Hung Li

Lun-Kuang Tan

Chia-Ao Chang

Hui-Ying Lu

A method may include depositing a first conductive material in an opening disposed between a first semiconductor structure and a second semiconductor structure, the first conductive material comprising at least one first void. The method further includes removing a portion of the first conductive material to form a trench, the trench exposing the at least one first void and being defined by a remaining portion of the first conductive material; and depositing a second conductive material in the trench, the second conductive material and the remaining portion of the first conductive material forming a dummy gate layer.

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Kaohsiung, Taiwan

Ping Hung Li