Nexplanar Corporation

Cmc Materials, Inc.

Cabot Microelectronics Corporation

Ping Huang

Diane Scott

William C Allison

Alexander William Simpson

Richard Frentzel

Robert Kerprich

Paul Andre Lefevre

Leslie M Charns

James P LaCasse

James Richard Rinehart

Chen-Chih Tsai

Eric S Moyer

Rajeev Bajaj

Lin Fu

Justin Stewart

Carlos Barros

William Michael Spitzig

A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.

Chemical mechanical planarization pads via vat-based production

The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.

UV-curable resins used for chemical mechanical polishing pads

Low density polishing pads and methods of fabricating low density polishing pads are described. In an example, a polishing pad for polishing a substrate includes a polishing body having a density approximately in the range of 0.4-0.55 g/cc. The polishing body includes a thermoset polyurethane material and a plurality of closed cell pores dispersed in the thermoset polyurethane material. Each of the plurality of closed cell pores has a shell composed of an acrylic co-polymer.

Low density polishing pad

Polishing pads having a polishing surface with continuous protrusions are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions are also described.

Polishing pad having polishing surface with continuous protrusions

Polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are also described.

Polishing pad having polishing surface with continuous protrusions having tapered sidewalls

Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Homogeneous polishing pad for eddy current end-point detection

Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer

Polishing pads with multi-modal distributions of pore diameters are described. Methods of fabricating polishing pads with multi-modal distributions of pore diameters are also described.

Polishing pad with multi-modal distribution of pore diameters

Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.

Polishing pad with homogeneous body having discrete protrusions thereon

Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D.

Soft polishing pad for polishing a semiconductor substrate

Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Polishing pad for eddy current end-point detection

A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area;

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Beaverton, OR, United States of America

Ping Huang