Motorola Corporation

Ping Chen

Navakanta Bhat

Hsing-Huang Tseng

Paul G Tsui

Daniel T K Pham

Paul G Y Tsui

A first dielectric layer (,) is formed over a semiconductor device substrate. A resist layer (,) is then patterned to expose portions of the first dielectric layer (,). Portions of the first dielectric layer (,) are removed to expose portions of the semiconductor device substrate (,). The resist layer (,) is then removed. The semiconductor device substrate is cleaned without using a fluorine-containing solution and a second dielectric layer (,) is formed overlying the semiconductor device substrate.

Process for forming semiconductor device with thick and thin films

A method for forming a dual gate oxide (DGO) structure begins by forming a first oxide layer (106) within active areas (110) and (112). A protection layer (108a) is then formed over the layer (106). A mask (114) is used to allow removal of the layers (106 and 108a) from the active area (110). A thermal oxidation process is then used to form a thin second oxide layer (118) within an active area (110). Conductive gate electrodes (120a and 120b) are then formed wherein the first oxide layer (106) and the protection layer (108c) are incorporated into the gate dielectric layer of an MOS transistor (122a). The transistor (122b) has a thinner gate oxide layer that excludes the protection layer (108c).

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Round Rock, TX, United States of America

Ping Chen