Novellus Systems Incorporated

Pin Sheng Sun

George D Papasouliotis

Vikram Singh

Md Sazzadur Rahman

Karen Prichard

Lauren Hall

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

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San Jose, CA, United States of America

Pin Sheng Sun