Nan Ya Technology Corporation

Pin-Hsiu Hsieh

Da-Zen Chuang

Chih-Chung Sun

The present disclosure provides a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate comprising a memory region and a logic region; forming a memory gate in or on the memory region; forming a plurality of first poly-silicon gates on the memory region and surrounding the memory gate; and forming a plurality of second poly-silicon gates on the logic region simultaneously with the formation of the first poly-silicon gates.

Method of fabricating semiconductor device

The present disclosure provides a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a memory cell, a first logic transistor, and a second logic transistor. The semiconductor substrate includes a memory region and a logic region. The memory cell is disposed in the memory region. The first logic transistor is disposed in the memory region and disposed adjacent to the memory cell. The second logic transistor is disposed in the logic region. The first logic transistor is configured to control operation of the memory cell in response to a memory control signal provided by the second logic transistor.

Growing community of inventors

Taoyuan, Taiwan

Pin-Hsiu Hsieh