International Business Machines Corporation

Dynapol Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hitachi Global Storage Netherlands, B.v.

Other

Central Glass Company, Limited

King Abdulaziz City for Science and Technology

Jsr Micro Inc.

Phillip Joe Brock

Ratnam Sooriyakumaran

Robert David Allen

Gregory Michael Wallraff

Hoa D Truong

Robert Dennis Miller

Qinghuang Lin

Alshakim Nelson

David Robert Medeiros

Richard Anthony DiPietro

Gregory Breyta

Linda Karin Sundberg

Carl Eric Larson

Blake W Davis

Hiroshi Ito

James L Hedrick

Dirk Pfeiffer

Wu-Song S Huang

Daniel Sanders

Craig Jon Hawker

Pushkara Rao Varanasi

Willi Volksen

Teddie Peregrino Magbitang

Richard Anthony Dipietro

Dennis R McKean

Daniel Joseph Dawson

Richard I Palmisano

Michael William Chaw

Dan Dawson

Sampath Purushothaman

Mahmoud M Khojasteh

Ranee W Kwong

William Dinan Hinsberg

Daniel J Dawson

Jitendra Singh Rathore

Debra Fenzel-Alexander

Thomas H Baum

Yukio Nishimura

Kuang-Jung Chen

William R Brunsvold

Dario Gil

Donald Clifford Hofer

Margaret C Lawson

Thomas I Wallow

Timothy M Hughes

Robert Allen David

Kazuhiko Maeda

Marie Angelopoulos

Jeffrey Donald Gelorme

Glenn H McGall

Wayne Martin Moreau

Dario Leonardo Goldfarb

Sean David Burns

Eiichi Kobayashi

Katherina E Babich

Masaki Fujiwara

Isao Nishimura

Arpan Pravin Mahorowala

Sally Ann Swanson

Frances Anne Houle

Daniel Joseph Coady

Fares D Alsewailem

Masafumi Yamamoto

Ali Afzali-ardakani

Geraud Jean-Michel Dubois

Luisa Dominica Bozano

Kazuki Fukushima

Julia Elizabeth Rice

James Economy

Robert L Jackson

Jeffrey W Labadie

Ronald Anthony DellaGuardia

Alexander M Friz

Hans Werner Horn

Jila Tabib

Leo L Linehan

Wesley LeRoy Hillman

Premlatha J Jagannathan

Franklin M Schellenberg

Randolph J Smith

Andrew Robert Eckert

Christopher R Moylan

Mark Clinton Thurber

Kathleen H Martinek

James R Lyerla, Jr

Jiunn Tsay

Dolores Carlotta Miller

Hamid A Almegren

Abdullah M Alabdulrahman

Shiro Kusumoto

Charlotte R DeWan

Mark Steven Slezak

Hoa Trung

Jacqlynn A Franklin

Matt Pinnow

A photoacid generating polymer (PAG polymer) comprises i) a first repeat unit of capable of reacting with a photogenerated acid to form a carboxylic acid containing repeat unit, ii) a second repeat unit of capable of forming the photogenerated acid, and iii) a third repeat unit comprising a norbornyl ester, wherein a norbornyl ring of the norbornyl ester comprises a monovalent substituent having the formula *-L'-C(CF)(OH). L&#x2032; is a divalent linking group comprising at least one carbon and the starred bond of L&#x2032; is linked to the norbornyl ring. The first repeat unit, second repeat unit, and the third repeat unit are covalently bound repeat units of the PAG polymer.

Photoacid generating polymers containing a urethane linkage for lithography

Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.

Chemically amplified photoresist composition and process for its use

Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

Photo-patternable dielectric materials and formulations and methods of use

Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof

Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

Self-topcoating resist for photolithography

Coating compositions include a polymer including: wherein Ris a silicon containing moiety, Ris an acid stable lactone functionality, and Ris an acid labile lactone functionality; X, X, Xare independently H or CH; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

Silicon containing coating compositions and methods of use

A method comprises forming a reaction mixture comprising a terephthalate polyester, a glycol comprising 2 to 5 carbons, and an amidine organocatalyst; and heating the reaction mixture at a temperature of about 120&#xb0; C. or more to depolymerize the terephthalate polyester, thereby forming a terephthalate reaction product comprising a monomeric dihydroxy terephthalate diester; wherein the terephthalate reaction product contains terephthalate oligomers in an amount less than the amount of terephthalate oligomers that would result from i) substituting the amidine organocatalyst with an equimolar amount of a guanidine catalyst and ii) depolymerizing the terephthalate polyester under otherwise identical reaction conditions.

Methods of depolymerizing terephthalate polyesters

A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1):  and

Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles

A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

Graded topcoat materials for immersion lithography

A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.

High contact angle topcoat material and use thereof in lithography process

Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

Photopatternable dielectric materials for BEOL applications and methods for use

Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

Self-topcoating photoresist for photolithography

Growing community of inventors

Sunnyvale, CA, United States of America

Phillip Joe Brock