Unity Semiconductor Corporation

Altatech Semiconductor

Saint-Augustin Canada Electric Inc.

Shin-Etsu Handotai Co., Ltd.

S.o.i.tec Silicon on Insulator Technologies

Fogale Nanotech

Alatech Semiconductor

Philippe Gastaldo

Alain Courteville

Gilles Fresquet

Mayeul Durand De Gevigney

Frederic Pernot

François Berger

Christophe Maleville

Susumu Kuwabara

Jean-Luc Delcarri

Patrice Belin

Kevin Quinquinet

Remi Blanchard

Viviane Leguy

Sophie Moritz

Mathieu Guilhem

Cleonisse Serrecchia

Olivier Piffard

Tristan Combier

Cécile Moulin

Rémi Blanchard

A method includes: determining height Z1 of a focus by an optical microscope having autofocus function which uses irradiation light of wavelength λ0 to adjust the focus; determining a wavelength λ1 of irradiation light used for obtaining observation image of second thin film; obtaining observation image of second thin film by using irradiation light of the wavelength λ1, while altering heights of the focus with the Z1 as reference point; calculating standard deviation of reflected-light intensity distribution within the observation image, obtaining height Z2 of the focus corresponding to a peak position where standard deviation is greatest, and calculating a difference ΔZ between Z1 and Z2; correcting the autofocus function with ΔZ as a correction value; and using the corrected autofocus function to adjust the focus, obtaining the observation image of the second thin film, and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image.

Method for measuring film thickness distribution of wafer with thin films

A method for inspecting a wafer including:

Method and system for inspecting boards for microelectronics or optics by laser doppler effect

The invention relates to a device for testing a concentrated photovoltaic module comprising at least one assembly of a photovoltaic cell and of a concentrator, the device being characterized in that it comprises: a light source; a parabolic mirror coupled to the source so as to reflect the light emitted by the source in an almost collimated light beam toward the module to be tested, in a direction perpendicular to the surface of the module; and an intensity filter interposed on the path of the almost collimated beam upstream of the module to be tested, the filter comprising at least partially absorbent regions that have a neutral spectral density with respect to the light beam, the at least partially absorbent regions being arranged facing higher intensity zones of the beam, so as to attenuate differences in the intensity of the beam.

Device for testing a concentrated photovoltaic module

The invention relates to a method for testing a concentrated photovoltaic module comprising a plurality of sub-modules, each containing a plurality of assemblies of a photovoltaic cell and of a concentrator arranged relative to the cell in order to concentrate on the cell radiation arriving at normal incidence, in which: a plurality of almost collimated light beams are transmitted toward the module by means of a plurality of light sources coupled to respective parabolic mirrors, each light source comprising a lamp suitable for emitting a light pulse and a supply device suitable for electrically supplying the lamp, there being a turn-on delay between the triggering of the supply device and the emission of the pulse, and the supply device of each lamp is triggered at a respective instant set depending on the turn-on delay of the lamp so that the pulses of all the lamps are emitted simultaneously and received simultaneously by the sub-modules.

Method for testing a concentrated photovoltaic module

An electronic wafer inspecting method includes:

Interferometric method and system using variable fringe spacing for inspecting transparent wafers for electronics, optics or optoelectronics

A method is provided for inspecting the surface of an object such as a wafer having tridimensional structures, using a confocal chromatic device with a plurality of optical measurement channels and a chromatic lens allowing optical wavelengths of a broadband light source to be focused at different axial distances defining a chromatic measurement range. The method includes a step of obtaining an intensity information corresponding to the intensity of the light actually focused on an interface of the object within the chromatic measurement range at a plurality of measurement points on the object by measuring a total intensity over the full spectrum of the light collected by at least some of the optical measurement channels in a confocal configuration.

Method for 2D/3D inspection of an object such as a wafer

A confocal chromatic device is provided, including at least one chromatic lens with an extended axial chromatism; at least one broadband light source; at least one optical detector; and at least one measurement channel with a planar Y-junction made with a planar waveguide optics technology, and arranged for transferring light from the at least one light source towards the at least one chromatic lens and for transferring light reflected back through the at least one chromatic lens towards the at least one optical detector.

Integrated chromatic confocal sensor

The disclosure relates to a device and method for testing a concentrated photovoltaic module comprising a plurality of sub-modules, which comprises: light sources; and parabolic mirrors coupled with the light sources so as to reflect the light from each source in quasi-collimated light beams toward the module to be tested, perpendicular to the module. Each light source comprises: an optical system comprising two parallel lenses on either side of a diaphragm; a lamp on an optical axis of the optical system; a reflector arranged on the axis, on the side opposite the optical system relative to the lamp, and translatably movable along the axis; and a housing containing the optical system, the lamp and the reflector and including an outlet opening for the light beam on the axis.

Device and method for testing a concentrated photovoltaic module

A method for inspecting a wafer, includes:

Method and system for inspecting wafers for electronics, optics or optoelectronics

A nanotopographic measuring device comprises an input arranged to receive sets of measurement data relating to a semiconductor wafer and memory organized into first and second working tables and a results table. A calculation function is capable of establishing a current surface equation from localized gradient values. The equation is established in such a way as to generally minimize a deviation amount between the gradient values calculated from the current surface equation and the localized gradient values. A reconstruction function calculates localized gradient values from a set of measurement data corresponding to an area of the wafer and completes the working tables with these values. It repeatedly calls the calculation function, each time with a part of the values of the first working table and the second working table corresponding to a portion of the area of the wafer to determine, each time, a current surface equation. It completes the results table with the localized height data corresponding to this area, in relation to the reference plane of the wafer, the localized height data being calculated from at least certain of the current surface equations.

Device and method for inspecting semiconductor materials

A confocal chromatic device for inspecting the surface of an object such as a wafer, including a plurality of optical measurement channels with collection apertures arranged for collecting the light reflected by the object through a chromatic lens at a plurality of measurement points, the plurality of optical measurement channels including optical measurement channels with an intensity detector for measuring a total intensity of the collected light. A method is also provided for inspecting the surface of an object such as a wafer including tridimensional structures.

Chromatic confocal device and method for 2D/3D inspection of an object such as a wafer

A confocal chromatic device is provided for inspecting the surface of an object such as a wafer, including a plurality of optical measurement channels with collection apertures arranged for collecting the light reflected by the object through a chromatic lens at a plurality of measurement points, and a magnifying lens arranged for introducing a variable or changeable scaling factor between the spatial repartition of the collection apertures and the measurement points. A method is also provided for inspecting the surface of an object such as a wafer including tridimensional structures.

Chromatic confocal device and method for 2D/3D inspection of an object such as a wafer with variable spatial resolution

The invention relates to a dark-field semiconductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator that is symmetrical in relation to a plane passing through the first and second axes and is provided with a mirror that is elliptically cut along a plane perpendicular to an axis perpendicular to the first axis and has a generator parallel to the first axis, parallel first and second slits being set up sideways in first and second portions of the concentrator at the points for concentrating the light that is scattered by the wafer and reflected by the second and first portions of the concentrator, respectively, and a photomultiplier using a slit.

Dark-field semiconductor wafer inspection device

Semiconductor wafer inspection device comprising a wager transport arm provided with at least one wafer support element, a wafer gripper, the gripper having two distant branches designed to take hold of the opposed edges of the wafer, the gripper being mounted so as to rotate on a shaft in order to be able to rotate the wafer between an approximately horizontal position and an approximately vertical position, and at least two inspection systems placed on one side of the wafer and on the other, in an approximately vertical position symmetrically with respect to the plane passing through the wafer.

Device and method for inspecting semiconductor wafers

Device for inspecting defects in semiconductor wafers, comprising a member for detecting surface defects using variations in the slope of a surface of the wafer, a member for detecting surface defects using variations in the light intensity reflected by a surface of the wafer, at a plurality of points, a member for detecting light intensity scattered by the surface of the wafer, a light source, and a detecting and classifying mechanism connected upstream of said detecting members.

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Pontcharra, France

Philippe Gastaldo