Temic Telefunken Microelectronic Gmbh

Petra Heim

Wolfgang Arndt

Klaus Graff

Alfons Hamberger

A process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity of charge carriers within a silicon wafer includes forming a plurality of semiconductor zones in the surface; reducing surface recombination velocity of charge carriers within the silicon wafer by maintaining temperature below 100&deg; C. while sequentially performing the steps of cleaning the surface to remove oxide; drying the surface by blowing a non-oxidizing gas thereon; directly applying a layer of lacquer onto the surface at a temperature below 100&deg; C.; and drying the layer of lacquer at a temperature below 100&deg; C. to generate an electrically non-conducting layer and reduce the surface recombination velocity of charge carriers within the silicon wafer in which the layer of lacquer contains halogen in a concentration of more than 0.1 volume %; and forming at least one conducting structure on the surface of the layer of lacquer.

Process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity

The reduction of surface recombination is required for the manufacture of electronic devices made of silicon as well as for the application of various measurements and analytical methods for determining the purity of silicon. According to this invention, a process will be described for applying a laquer layer to the surface of silicon wafers, wherby the surface recombination velocity will be reduced to a value below 100 cm/s.

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Heilbronn, Germany

Petra Heim