Asm International N.v.

Petra Al&eacute;n

Mikko Ritala

Markku Leskel&auml;

Titta Aaltonen

Marika Juppo

The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.

Process for producing metal thin films by ALD

Methods for producing metal nitride thin layers having low resistivity by means of atomic layer deposition processes comprising alternate surface reactions of metal and nitrogen source materials include using nitrogen source materials that have better reducing properties than ammonia and 1,1-dimethyl hydrazine. Suitable compounds for that purpose include those in which a hydrocarbon group bound to nitrogen, when dissociating in a homolytic manner, generates a radical that serves as a reducing agent and reacts further to generate atomic hydrogen. The nitride thin layers produced are especially suitable for use as diffusion barrier layers in integrated circuits.

Growing community of inventors

Helsinki, Finland

Petra Alén

Growing community of inventors

Helsinki, Finland

Petra Al&eacute;n

Petra Alén