Freescale Semiconductor,inc.

Maxim Integrated Products, Inc.

Texas Instruments Corporation

Apple Inc.

Hanking Electronics, Ltd.

Peter R Harper

Arkadii V Samoilov

Tu-Anh N Tran

Susan H Downey

Kenneth Robert Rhyner

Viren V Khandekar

Lois E Yong

Tongbi T Jiang

Pirooz Parvarandeh

Kenneth James Maggio

George R Leal

Sheila F Chopin

Amit Subhash Kelkar

Karthik Thambidurai

Alan H Woosley

Karthik Shanmugam

Yinjuan He

Dieu Van Dinh

Tu Anh Tran

Jeffrey W Metz

Baher S Haroun

Perry H Pelley

Rajen Manicon Murugan

Kevin John Hess

Richard Eguchi

Nicole Dorene Kerness

Chu-Chung Lee

Sriram Muthukumar

Joy T Jones

Christopher Francis Edwards

Robert Joseph Wenzel

Hemant D Desai

Phillip J Benzel

Martin T Mason

Yaping Zhou

William M Williams

Richard I Olsen

Kevin P Lyne

Vivek Swaminathan Sridharan

Sohrab Safai

Demetre Kondylis

Robert Fabian McCarthy

Michael V Leoni

David G Wontor

An optical module may be formed on a wafer. The wafer may include a substrate and one or more optical components encapsulated, at least partially, by the substrate. Each of the optical components are configured to emit or sense light. The wafer may also include one or more printed circuit board (PCB) bars encapsulated, at least partially, by the substrate allowing electrical conductivity from a first side of the substrate to a second side of the substrate. The wafer may also include at least one redistribution layer to electrically couple at least one of the optical components to at least one of the PCB bars.

Wafer level optical module

A method for manufacturing an optical wafer may include coating multiple optical components with a substrate. The multiple optical components may include a light emitting component and a light detecting component, and each of the optical components may include one or more electrical connections. The method may also include depositing a redistribution layer onto at least one of the electrical connections, wherein the redistribution layer routes the electrical connection within the optical wafer to an external connection. The method may also include depositing a passivation layer over the redistribution layer and depositing a dark photoresist layer on at least the passivation layer. The photoresist layer may operatively reduce optical interference between at least one light emitting component and at least one light detecting component.

A wafer level package device, electronic device, and fabrication methods for fabrication of the wafer level package device are described that include forming an exposed lead tip on the wafer level package for providing a solder buttress structure when coupling the wafer level package device to another electrical component. In implementations, the wafer level package device includes at least one integrated circuit die, a metal pad, a first dielectric layer, a redistribution layer, a second dielectric layer, a pillar structure, a molding layer, a pillar layer, and a plating layer, where the pillar layer is sawn to form pad contacts on at least two sides of the wafer level package device. The exposed pad contact facilitate a solder fillet and buttress structure resulting in improved board level reliability.

Enhanced board level reliability for wafer level packages

A wafer level package, electronic device including the wafer level package, and fabrication methods are described that include forming a cantilever pillar design as a portion of the wafer level package and/or a segmented solder connection for preventing and reducing connection stress and increasing board level reliability. In implementations, the wafer level device that employs example techniques in accordance with the present disclosure includes at least a section of a processed semiconductor wafer including at least one integrated circuit die, a first dielectric layer disposed on the processed semiconductor wafer, a first pillar, a second pillar formed on the first pillar, a second dielectric layer formed on the first dielectric layer and surrounding a portion of the first pillar and the second pillar, and at least one solder ball disposed on the second pillar.

Wafer level device and method with cantilever pillar structure

The invention relates to sensors, and more particularly, a sensor device having accelerometer and gyroscope integrated into a low cost compact package. The device includes: MEMs wafer; and an ASIC wafer bonded to the MEMs wafer; a wafer-level-package redistribution layer (WLP RDL) formed on a surface of the ASIC wafer; and a ball grid array having a plurality of solder balls that electrically connect the package to a circuit board. The MEMs wafer includes the accelerometer and gyroscope, while the ASIC wafer includes two separate cavities corresponding to the accelerometer and gyroscope, respectively. The ASIC wafer includes electrical circuits/components to process the readout signals received from the accelerometer and gyroscope.

Wafer level micro-electro-mechanical systems package with accelerometer and gyroscope

A semiconductor package device is disclosed that includes a passive energy component integrated therein. In an implementation, the semiconductor package device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes one or more integrated circuits formed proximal to the first surface. The semiconductor package device also includes a passive energy component positioned over the second surface. The passive energy component is electrically connected to one or more integrated circuits. The semiconductor package device also includes an encapsulation structure disposed over the second surface and at least substantially encapsulates the passive energy component.

Semiconductor package device having passive energy components

Optical devices are described that integrate multiple heterogeneous components in a single, compact package. In one or more implementations, the optical devices include a carrier substrate having a surface that includes two or more cavities formed therein. One or more optical component devices are disposed within the respective cavities in a predetermined arrangement. A cover is disposed on the surface of the carrier substrate so that the cover at least substantially encloses the optical component devices within their respective cavities. The cover, which may be glass, is configured to transmit light within the predetermined spectrum of wavelengths.

Multichip wafer level package (WLP) optical device

A device and fabrication techniques are described that employ wafer-level packaging techniques to fabricate semiconductor devices that include an embedded integrated circuit chip device and an embedded passive device on a semiconductor wafer device. In implementations, the wafer-level package device includes a semiconductor wafer device, an embedded integrated circuit chip, an embedded passive device, an encapsulation structure covering at least a portion of the semiconductor wafer device, the embedded integrated circuit chip, and the embedded passive device, at least one redistribution layer structure, and at least one solder bump for providing electrical interconnectivity to the devices. Once the wafer is singulated into semiconductor devices, the semiconductor devices may be mounted to a printed circuit board, and the solder bumps may provide electrical interconnectivity through the backside of the device that interface with pads of the printed circuit board.

Wafer-level passive device integration

Wafer-level package semiconductor devices for high-current applications are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar. The wafer-level package device also includes an integrated circuit chip device (e.g., small die) configured upon the integrated circuit chip (e.g., large die). In the wafer-level package device, the height of the integrated circuit chip device is less than the height of the pillar and/or less than the combined height of the pillar and the one or more solder contacts.

Multi-die, high current wafer level package

Semiconductor devices are described that include a semiconductor device having multiple, stacked die on a substrate (e.g., a semiconductor wafer). In one or more implementations, wafer-level package devices that employ example techniques in accordance with the present disclosure include an ultra-thin semiconductor wafer with metallization and vias formed in the wafer and an oxide layer on the surface of the wafer, an integrated circuit chip placed on the semiconductor wafer, an underfill layer between the integrated circuit chip and the semiconductor wafer, a buffer material formed on the semiconductor wafer, the underfill layer, and at least one side of the integrated circuit chip, an adhesive layer placed on the buffer layer and the integrated circuit chip, and a stiffener layer placed on the adhesive layer. The semiconductor device may then be segmented into individual semiconductor chip packages.

Semiconductor device having a buffer material and stiffener

A method for forming an integrated circuit package is disclosed. A flex circuit is form by forming a direct connect pad on a first side of a dielectric layer. After forming the direct connect pad, an opening from a second side of the dielectric layer is formed to expose the direct connect pad. A blind via is formed within the opening in the dielectric layer. A first conductor is formed within the opening. A bond pad of a semiconductor die is electrically coupled with the direct connect pad using a second conductor, wherein the bond pad and the second conductor directly overlie the direct connect pad.

Method of forming an integrated circuit package including a direct connect pad, a blind via, and a bond pad electrically coupled to the direct connect pad

A ball grid array (BGA) includes a plurality of metal balls adapted for connection between an electrical circuit and a substrate. A first portion of the BGA contains a first group of the metal balls arranged according to a first pitch. A second portion of the BGA contains a second group of metal the balls arranged according to a second pitch that is less than the first pitch, to provide increased metal contact area and correspondingly enhanced thermal transfer capability.

Integrated circuit packaging with ball grid array having differential pitch to enhance thermal performance

An integrated circuit package including a semiconductor die and a flexible circuit (flex circuit), and a method for forming the integrated circuit package. The flex circuit can include a direct connect pad which is not electrically coupled to an active trace, a blind via electrically coupled to the direct connect pad, and a semiconductor die having a bond pad which is electrically coupled to the direct connect pad using a conductor. The bond pad, the conductor, the direct connect pad, and the blind via can all be vertically aligned, each with the other.

Integrated circuit package including a direct connect pad, a blind via, and a bond pad electrically coupled to the direct connect pad

A package-on-package (POP) package precursor and packaged devices and systems therefrom includes an electronic substrate including electrically conductive layers and a top surface. A first portion of the top surface has an IC die attached thereon. A second portion of the top surface has a plurality of first attach pads on opposing sides of the IC die for electrically coupling to a first electronic device on top of the IC die. At least a third portion of the top surface is positioned laterally with respect to the first and second portion. The third portion includes a plurality of second attach pads for electrically coupling to at least a second electronic device. At least one of the electrically conductive layers includes a coupling trace that couples at least one of the plurality of second attach pads to the IC die and/or one or more of the plurality of first attach pads.

Integrated circuit stacked package precursors and stacked packaged devices and systems therefrom

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Gilroy, CA, United States of America

Peter R Harper