Varian Associates, Inc.

Radiation Dynamics, Inc.

Peter R Hanley

Norman L Turner

Marshall Robert Cleland

Scott C Holden

Kennard H Morganstern

A method for pretreatment of a photoresist layer adhered to a semiconductor wafer prior to charged particle beam processing. The method includes bombarding the photoresist layer with ions which are electrically inactive with respect to the wafer. Suitable ions include ions of the noble gases. The pretreatment method causes rapid photoresist outgassing and carbonization without altering the electrical properties of the wafer. Outgassing during subsequent processing is thereby reduced. The pretreatment method is particularly applicable to ion implantation wherein dose measurement errors resulting from photoresist outgassing are reduced. The pretreatment method is performed at high current to minimize the effect on system throughput.

Method for photoresist pretreatment prior to charged particle beam

For enhanced heat conductive transfer from a semiconductor wafer during ion implantation, the wafer is clamped to a platen having a contour f(r,.theta.) computed to establish uniform contact pressure over said wafer for a number, n, of discrete clamping locii distributed along the periphery of the wafer. The available area of the wafer is thus maximized.

Optimum surface contour for conductive heat transfer with a thin

A unitary electromagnet having two gaps is provided for the double deflection scanning of a charged particle beam. The unitary electromagnet is configured to permit traverse by said beam through the gaps in a plane defined by the gaps. The depth of the gaps is large as compared to the length to accommodate the scan of the beam. The mode of scanning is determined by the waveform used to energize the windings of the electromagnet and includes axial sweep scanning, off center scanning and split scanning.

Unitary electromagnet for double deflection scanning of charged particle

An area beam of electrons capable of delivering large doses of electron irradiation at small dose rates and having a predetermined distribution pattern is provided by an electron accelerator comprising plural discrete cathodes positioned as required to achieve the desired pattern. An individual emission control is provided for the filament of each cathode. In a preferred embodiment plural cathodes are movably mounted in a row extending transversely of the transport path of material to be irradiated, a plurality of such rows being positioned along the direction of transport.

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Rowley, MA, United States of America

Peter R Hanley