International Business Machines Corporation

Peter H Bartlau

Alfred Wagner

Thomas Benjamin Faure

Supratik Guha

Edward William Kiewra

Jerome Brett Lasky

Robert L Sandstrom

Marc Waine Cantell

Louis M Kindt

James D Weil

The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) AlOon a photomask, subjecting said film of AlOon the photomask to a plasma treatment and then irradiating the deposited film of ALD AlOon the coated photomask at a wavelength of 193 nm.

Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3

A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.

Techniques for reducing degradation and/or modifying feature size of photomasks

A method for limiting divot formation in shallow trench isolation structures. The method includes: providing a trench formed in a silicon region with a deposited oxide; oxidizing a top layer of the silicon region to form a layer of thermal oxide on top of the silicon region; and selectively etching the thermal oxide with respect to the deposited oxide.

Method for limiting divot formation in post shallow trench isolation processes

Growing community of inventors

Essex Junction, VT, United States of America

Peter H Bartlau