International Business Machines Corporation

Peter D Roper

Daniel C Edelstein

Naftali Eliahu Lustig

Stephen Ellinwood Luce

Keith Randal Pope

Wilma Jean Horkans

Kenneth Parker Rodbell

Vlasta A Brusic

Mark A Jaso

William L Guthrie

Paul M Feeney

Frank Benjamin Kaufman

Naftall E Lustig

David B Thompson

Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.

Chemical-mechanical planarization of metallurgy

Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.

Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing

Elimination of photo-induced electrochemical dissolution in chemical

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Clinton Corners, NY, United States of America

Peter D Roper