On-line Technologies, Inc.

Mks Instruments, Inc.

Peter A Rosenthal

Peter R Solomon

Sylvie Charpenay

Victor A Yakovlev

Chad M Nelson

Martin L Spartz

Anthony S Bonanno

William J Eikleberry

Stuart Farquharson

Shaohua Liu

A fault detection and classification system for wafer etching, tool cleaning, and other fabrication processes employs exhaust gas composition data from a Fourier transform infrared spectrometer in addition to machine-state and other process-state data. Process control may be initiated based upon the classification of a fault.

Method and apparatus for fault detection and control

An implementation of sensor-driven run-to-run process control for semiconductor wafer fabrication integrates a robust, automated Fourier transform infrared reflectometer onto a wafer fabrication cluster tool. Cell controller software integrates an adaptive run-to-run controller, process tool recipe upload and download through a SECS port, sensor control, data archiving, and a graphical user interface.

Cell control method and apparatus

A fast and practical method for the analysis of patterned samples of semiconductor integrated circuits, and other materials, determines the thickness and composition of layers fabricated during manufacture. The method employs a measurement spot that is sufficiently large to irradiate areas of two or more different regions of the sample that result from its patterned features, generally at replicable locations. In carrying out the method, one or more of reflectance, transmittance, and radiance spectrance is measured, and the various parameters characterizing the thickness and composition in the patterned areas are obtained using, for example, a model-based analysis of the polarization and amplitude of the emanating radiation, the model parameters being iteratively adjusted to achieve a match with measured values. The method can be made fast and practical by using measurements that are taken both before and also after treatment steps are effected, and/or by using measurements from the same location on designated samples undergoing the same process, to reduce the number of unknown parameters in a reference model.

Spectrometric method for analysis of film thickness and composition on a

The method determines the thickness and the free carrier concentration of at least one layer of a structure. An exposed surface of the structure is irradiated using spectral radiation, and the measured reflectance spectrum is compared to a calculated spectrum. Using algorithms that include terms representative of complex refractive indices, layer thickness, dielectric constants, and free carrier concentrations, values are iteratively assigned to the thickness and free carrier concentration parameters so as to produce a best fit relationship between the compared spectra, and to thereby determine those parameters.

Film thickness and free carrier concentration analysis method and

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West Simsbury, CT, United States of America

Peter A Rosenthal