Advanced Micro Devices Corporation

Rodel Holdings, Inc.

International Business Machines Corporation

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Peter A Burke

David B James

Lee Melbourne Cook

Terence M Thomas

Arun Vishwanathan

David Shidner

Vikas Sachan

Peter J Beckage

Craig D Lack

Kevin D Shipley

Qianqiu (Christine) Ye

Joseph K So

Elizabeth A (Kegerise) Langlois

Keith G Pierce

David Gettman

John V H Roberts

Christopher H Raeder

Michael A Leach

Thomas M Brown

Qiuliang Luo

Sarah J Lane

Bradley J Yellitz

Chung H Lam

Steven C Avanzino

Christy Mei-Chu Woo

James Spiros Nakos

Diana M Schonauer

James Shen

Matthew R VanHanehem

John H Givens

Craig M Hill

Gilbert H Ross

Eric H Freeman

Tony Quan Tran

Reza Golzarian

Vilas N Koinkar

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

Polishing pads for chemical mechanical planarization

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

Hydrolytically stable grooved polishing pads for chemical mechanical planarization

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area. The pad of this invention resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, better slurry distribution and waste removal from the pad surface, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

Grooved polishing pads for chemical mechanical planarization

A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO ). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Composition and method for polishing in metal CMP

A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.

Methods to control film removal rates for improved polishing in metal CMP

A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Dissolution of metal particles produced by polishing

A method for CMP polishing with a first step slurry composition selective to a metal in a metal layer to remove the metal at a high removal rate during polishing, and a second step slurry composition selective to a barrier film and least selective to either of an underlying dielectric layer or a metal interconnection structure in the dielectric layer, to remove the barrier film at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the interconnection structure.

Control of removal rates in CMP

A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been found to be particularly advantageous for metal polishing, particularly the polishing of metal layers during the manufacture of semiconductor devices.

Chemical mechanical polishing slurries for metal

The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP). The present invention also relates to a method of determining the wear rate of a fixed abrasive polishing pad.

Methods for break-in and conditioning a fixed abrasive polishing pad

A chemical-mechanical polishing slurry made by mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

Chemical-mechanical polishing slurry that reduces wafer defects and polishing system

A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

Chemical-mechanical polishing slurry that reduces wafer defects

A method and apparatus for cleaning a semiconductor wafer. The apparatus preferably includes a brush holder that may include a base and a connection stud extending from the base. The base preferably includes a receiving lip for receiving a brush that is disposed on its lower surface. The brush preferably includes a substantially flexible material and a plurality of protrusions for contacting a semiconductor wafer. A backing plate preferably is attached to one side of the brush for connecting the brush to the brush holder. The backing plate preferably further includes an outer edge capable of forming a snap-fit engagement within the receiving lip of the brush holder to: (a) facilitate periodic replacement of the brush and (b) form a mechanical connection between the brush and brush holder that can withstand the presence of relatively basic or acidic cleaning agents. A rotatable shaft is connected to the connection stud. The rotatable shaft includes a conduit running through the shaft for flowing cleaning fluid through a borehole in the connection stud and brush holder and through an opening in the backing plate and brush so that cleaning fluid may be directly dispensed through the shaft conduit to the wafer. This cleaning fluid disbursement technique improves cleaning and prevents particles from being left behind as the brush is removed from the wafer.

Apparatus and method for cleaning semiconductor wafer

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Austin, TX, United States of America

Peter A Burke