Applied Materials, Inc.

Peng Xie

Ludovic Godet

Christopher Dennis Bencher

Huixiong Dai

Yong Cao

Daniel Lee Diehl

Weimin Zeng

Tingjun Xu

Joseph C Olson

Qiwei Liang

Tristan Yonghui Ma

Sang Ki Nam

Timothy B Michaelson

Subhash Deshmukh

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Controlling photo acid diffusion in lithography processes

A method of processing a substrate is disclosed herein. The method includes applying a photoresist layer comprising a photoacid generator to a substrate, wherein a first portion of the photoresist layer has been exposed unprotected by a photomask to a radiation light in a lithographic exposure process. The method also includes applying an electric field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction, wherein the electric field is applied by a first alternating pair of a positive voltage electrode and a negative voltage electrode and a second alternating pair of a positive voltage electrode and a negative voltage electrode.

Tooling configuration for electric/magnetic field guided acid profile control in a photoresist layer

The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiONC:H, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Optically tuned hardmask for multi-patterning applications

In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Resist hardening and development processes for semiconductor device manufacturing

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Electric/magnetic field guided acid diffusion

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate, the method includes applying a photoresist layer comprising a photoacid generator to a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

Electric/magnetic field guided acid profile control in a photoresist layer

Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application may control the diffusion of the charged species generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. The field application may additionally or alternatively control the diffusion of the charged species in a direction perpendicular to a plane formed by the photoresist layer. Such controlled perpendicular diffusion may increase the photoresist sensitivity. In other embodiments, the field may control the diffusion of the charged species within the plane of the photoresist layer but in a direction perpendicular or non-parallel to the line and spacing direction. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

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Fremont, CA, United States of America

Peng Xie