Taiwan Semiconductor Manufacturing Comp. Ltd.

Pei Shan Chang

Ming-Hsing Tsai

Chun-Hsien Huang

Wei-Jung Lin

Chih-wei Chang

Ching-Yi Chen

Ya-Yi Cheng

Yi-Hsiang Chao

Kevin Lee

Shu-Lan Chang

Peng-Hao Hsu

A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.

Contact features of semiconductor device and method of forming same

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Taipei, Taiwan

Pei Shan Chang